Jiangsu Profile
Product List
1006. 40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1007. 4A 800V N-Channel Enhancement Mode Power MOSFET B4N80 TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
1008. 8A 700V N-Channel Enhancement Mode Power MOSFET F8N70 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1009. 108A 100V N-Channel Enhancement Mode Power MOSFET DHS051N10P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...
1010. 80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...
1011. 47A 100V N-Channel Enhancement Mode Power MOSFET DH135N10P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
1012. 80A 650V Trench FS IGBT DGC80F65M TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...
1013. 68A 100V N-Channel Enhancement Mode Power MOSFET DH140N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH140N10D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 68 A (T=100ºC) 48 A Drain ...
1014. 180A 40V N-Channel Enhancement Mode Power MOSFET DHS020N04E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1015. 108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...
1016. 75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1017. 120A 40V N-Channel Enhancement Mode Power MOSFET DTG032N04N TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
1018. 96A 40V N-Channel Enhancement Mode Power MOSFET DH033N04P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...
1019. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS130N10D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1020. 60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
