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40A 600V Insulated Gate Bipolar Transistor IGBT G40T60D TO-3PN
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40A 600V Insulated Gate Bipolar Transistor IGBT G40T60D TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power MOSFET DH80N08 TO-220
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80A 80V N-Channel Enhancement Mode Power MOSFET DH80N08 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power MOSFET DHF50N06 TO-220F
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50A 60V N-Channel Enhancement Mode Power MOSFET DHF50N06 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

210A 60V N-Channel Enhancement Mode Power MOSFET DHE027N06 TO-263
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210A 60V N-Channel Enhancement Mode Power MOSFET DHE027N06 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power MOSFET DH50N06 TO-220
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1115.

50A 60V N-Channel Enhancement Mode Power MOSFET DH50N06 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07B TO-251
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1116.

60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07B TO-251 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 30V N-Channel Enhancement Mode Power MOSFET DH033N03D TO-252
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1117.

100A 30V N-Channel Enhancement Mode Power MOSFET DH033N03D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power MOSFET DH10H055R TO-220
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120A 100V N-Channel Enhancement Mode Power MOSFET DH10H055R TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21A 650V N-Channel Super Junction Power MOSFET DHFSJ21N65 TO-220F
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21A 650V N-Channel Super Junction Power MOSFET DHFSJ21N65 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power MOSFET DHFSJ11N65 TO-220F
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1120.

11A 650V N-Channel Super Junction Power MOSFET DHFSJ11N65 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Automotive Grade Power MOSFET G40N120D TO-247
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40A 1200V Automotive Grade Power MOSFET G40N120D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03P DFN5
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96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03P DFN5 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH030N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-252B
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85A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G50T65DS TO-247S
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50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G50T65DS TO-247S Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Photo Etched Stamped Power Transistor Copper Lead Frame Packaging
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Photo Etched Stamped Power Transistor Copper Lead Frame Packaging Open Details in New Window [Jun 18, 2026]

OEM Sheet Metal Stamping IC Circuit Copper LED Lead Frame What is commonly referred to as etching, also known as photochemical etching, is a process that involves the following steps: through plate-making and exposure, ...

Company: Changshu Evergrande Imp. & Exp. Co., Ltd.