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11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b
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1111.

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b
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1112.

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Bt152 12A 800V to-220f Series 12A Scrs Transistor Support Thyistor Customization
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1113.

Bt152 12A 800V to-220f Series 12A Scrs Transistor Support Thyistor Customization Open Details in New Window [Dec 11, 2025]

ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

Bt152 12A 650V to-220f Series 12A Scrs Transistor Support Thyistor Customization
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1114.

Bt152 12A 650V to-220f Series 12A Scrs Transistor Support Thyistor Customization Open Details in New Window [Dec 11, 2025]

ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

120V/25mΩ /36A N-Mosfet Dse270n12n3
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1115.

120V/25mΩ /36A N-Mosfet Dse270n12n3 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252
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1116.

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252 Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power Mosfet D1404 to-220
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1117.

200A 40V N-Channel Enhancement Mode Power Mosfet D1404 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT D1404/ID1404/ED1404 FD1404 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package
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1118.

150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6
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1119.

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6
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1120.

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
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1121.

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet Dse108n20na to-263
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1122.

200V/11mΩ /110A N-Mosfet Dse108n20na to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power Mosfet Dh80n08 to-220
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1123.

80A 80V N-Channel Enhancement Mode Power Mosfet Dh80n08 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 200V N-Channel Enhancement Mode Power Mosfet Dh640
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1124.

18A 200V N-Channel Enhancement Mode Power Mosfet Dh640 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G30n60d to-247
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1125.

Insulated Gate Bipolar Transistor IGBT G30n60d to-247 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd