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120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263
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1111.

120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247
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1112.

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6
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1113.

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6
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1114.

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263
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1115.

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E
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1116.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6
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1117.

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6
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1118.

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6
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1119.

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263
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1120.

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN
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1121.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247
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1122.

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G50T65DS TO-247S
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1123.

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G50T65DS TO-247S Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 68V N-Channel Enhancement Mode Power MOSFET DTG080N07N TO-220C
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1124.

80A 68V N-Channel Enhancement Mode Power MOSFET DTG080N07N TO-220C Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A
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1125.

30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd