Jiangsu Profile
Product List
1156. 3A 900V N-Channel Enhancement Mode Power Mosfet Dh3n90 to-220c 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
1157. 320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
1158. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1159. 18A 500V N-Channel Enhancement Mode Power Mosfet F18n50 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT F18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
1160. 140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1161. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
1162. 70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1163. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
1164. 12A 700V N-Channel Super Junction Power Mosfet Djf360n70 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A Single Pulse Avalanche ...
1165. 120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...
1166. 40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
1167. 80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...
1168. 60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 45 A Drain ...
1169. 31A 600V N-Channel Super Junction Power Mosfet Djc099n60f to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...
1170. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
