Jiangsu Profile
Product List
1156. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10e to-263 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS037N10E DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1157. 13A 650V N-Channel Super Junction Power Mosfet Dhfsj13n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1158. 120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1159. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1160. 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...
1161. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1162. 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1163. 100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1164. 175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
1165. 140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1166. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1167. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1168. 13A 500V N-Channel Enhancement Mode Power Mosfet E13n50 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1169. 120A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n045r to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1170. 250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
