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285A 85V N-Channel Enhancement Mode Power MOSFET DHS020N88U TOLL
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1081.

285A 85V N-Channel Enhancement Mode Power MOSFET DHS020N88U TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 240 A (T=100ºC) 170 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 100V N-Channel Enhancement Mode Power MOSFET DSU021N10NA TOLL
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1082.

300A 100V N-Channel Enhancement Mode Power MOSFET DSU021N10NA TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DSU021N10NA Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 210 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 60V N-Channel Enhancement Mode Power MOSFET DH045N06P DFN5*6
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1083.

115A 60V N-Channel Enhancement Mode Power MOSFET DH045N06P DFN5*6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH045N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 115 A (T=100ºC) 80 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power MOSFET DSP038N08NA DFN5X6
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1084.

130A 85V N-Channel Enhancement Mode Power MOSFET DSP038N08NA DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 92 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

175A 150V N-Channel Enhancement Mode Power MOSFET DSU047N15NA TOLL
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1085.

175A 150V N-Channel Enhancement Mode Power MOSFET DSU047N15NA TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power MOSFET DHS010N04U TOLL
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1086.

300A 40V N-Channel Enhancement Mode Power MOSFET DHS010N04U TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 300 (Tc=25ºC) 228 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power MOSFET DSU010N04LA TOLL
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1087.

300A 40V N-Channel Enhancement Mode Power MOSFET DSU010N04LA TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 228 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGE20F65M2 TO-263
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1088.

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGE20F65M2 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 100V N-Channel Enhancement Mode Power MOSFET DHS250N10D TO-252B
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1089.

25A 100V N-Channel Enhancement Mode Power MOSFET DHS250N10D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10D TO-252B
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1090.

12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 100V N-Channel Enhancement Mode Power MOSFET DSB150N10L3 TO-251B
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1091.

60A 100V N-Channel Enhancement Mode Power MOSFET DSB150N10L3 TO-251B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-220C & DHS110N15D TO-252B
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1092.

105A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-220C & DHS110N15D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150A 30V N-Channel Enhancement Mode Power MOSFET DHD150N03 TO-252
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1093.

150A 30V N-Channel Enhancement Mode Power MOSFET DHD150N03 TO-252 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power MOSFET DHD150N03 TO-252
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1094.

50A 40V N-Channel Enhancement Mode Power MOSFET DHD150N03 TO-252 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 600V Insulated Gate Bipolar Transistor IGBT G40T60D TO-3PN
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1095.

40A 600V Insulated Gate Bipolar Transistor IGBT G40T60D TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd