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120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c
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1081.

120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT D120N10ZR/ ED120N10ZR FD120N10 ZR Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
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1082.

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 to-220c
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1083.

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS02 2N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 600V N-Channel Enhancement Mode Power Mosfet D2n60 to-252b
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1084.

2A 600V N-Channel Enhancement Mode Power Mosfet D2n60 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT D2N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 0A (T=100ºC) 1.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10.6A 650V N-Channel Super Junction Power Mosfet Djf380n65t to-220f
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1085.

10.6A 650V N-Channel Super Junction Power Mosfet Djf380n65t to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10d to-252b
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1086.

20A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10d to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 650V N-Channel Enhancement Mode Power Mosfet D2n65
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1087.

2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT D2N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 A (T=100ºC) 1.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65
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1088.

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c
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1089.

180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c
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1090.

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 500V N-Channel Enhancement Mode Power Mosfet 13n50 to-220c
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1091.

13A 500V N-Channel Enhancement Mode Power Mosfet 13n50 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b
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1092.

60A 60V N-Channel Enhancement Mode Power Mosfet DHD015n06 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 45 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b
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1093.

21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c
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1094.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 600V N-Channel Enhancement Mode Power Mosfet 20n60
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1095.

20A 600V N-Channel Enhancement Mode Power Mosfet 20n60 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd