Jiangsu Profile
Product List
931. 5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c 
[Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
932. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
933. 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
934. Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet [Sep 29, 2025]
[Sep 29, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
935. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
936. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
937. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
938. Hot Sale 100V/15mΩ /50A N-Mosfet Dhs180n10ld to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
939. Hot Sale -100V/33mΩ /-35A P-Channel Enhancement Mode Power Mosfet Dh100p30d to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
940. Hot Sale 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03 to-220c [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
941. 50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
942. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
943. 145A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04p Dfn5*6-8 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
944. DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet [Jun 30, 2025]
[Jun 30, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...
945. 10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
