Jiangsu Profile
Famous Export Brand
Product List
226. 2.5-7.2GHz Ingap/GaAs Heterojunction Bipolar Transistor Signal Power Amplifier Transistor for ... 
[Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description YV257208 is an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC Oscillator with negative resistance devices, buffer amplifiers, filters and active biasing networks. The ...
227. Bipolar Transistor BU406 TO-220C [Aug 09, 2026]
[Aug 09, 2026] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
228. Digital Pressure Pressure Transmitter Switch Druckschalter 2 Way PNP Transistor Output [Nov 05, 2026]
[Nov 05, 2026] Product Overview SAC-131-PNP is a smart digital pressure switch with 4-20mA analog output and 2-channel PNP transistor outputs. Measuring range from -0.1MPa vacuum to 100MPa high pressure with 0.5% accuracy. The ...
229. 60W 6-8GHz 50ω-Match GaN 28V 60W Power Amplifier GaN High Electron Mobility Transistor [Oct 16, 2026]
[Oct 16, 2026] Product Description Product Description YPM60800860M is a 60-watt, 50 Ω -matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth ...
230. Bipolar Transistor D882 TO-126 [Aug 08, 2026]
[Aug 08, 2026] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBD 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base Current(continuous) VEBO 5 V Collector current IC 3 A Collector pulse current (TP < ...
231. Zhendi New Original 650V 13A To252 Sst65r360s2 N-Channel SMD Mosfet Transistor [Jun 22, 2026]
[Jun 22, 2026] Product Description Product Features With a meticulous Single Mesa structure, our diode rectifier MOSFET transistor is engineered for peak performance. Featuring an advanced table glass passivation process, this ...
232. 30W 50V GaN Hemt RF PA Power Amplifier RF Power Transistor for 5700- 5900MHz [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is ...
233. 7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description Innotion's YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth ...
234. High Electron Mobility 60W 28V Gallium Nitride High Gain Wide Bandwidth Capability Frequency up to ... [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description Innotion's YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
235. High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor Yp601241t [Jul 09, 2026]
[Jul 09, 2026] Product Description Product Description Innotion's YP601241T is a 15-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
236. Durable Power Diode Transistor for Enhanced Energy Conservation [Apr 08, 2026]
[Apr 08, 2026] Elevate your potential with the ultimate in efficiency and cost-effectiveness through our Factory Price Disc Thyristor Power Diode Transistors. Infuse your projects with our trailblazing technology, meticulously crafted ...
237. FUJI IGBT module 6MBI200XX-120-50 2MBI100XA-120-50 2MBI150XA-120-50 IGBT Transistor [Jun 02, 2026]
[Jun 02, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 6-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
238. FF900R12ME7_B11_ENG FF600R12IP4 FF600R12IE4 High Tech IGBT Infineon IGBT Transistor [Jun 01, 2026]
[Jun 01, 2026] Product Description Infineno IGBT module Infineon, a German company, produces a wide range of IGBT modules. To facilitate customer selection, we categorize them by voltage levels, including 600V/650V, 1200V, ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
239. Microprocessor Transistor Safari Camping for Events Large Hotel Tent Luxury Resort Party Marquee ... [Jan 15, 2026]
[Jan 15, 2026] Accessories of our tents · Covers: colourful cover, transparent cover, inflatable roof cover · Windows: dome or square clear PVC windows, mesh window, glass window for glass ...
240. FUJI Newset IGBT Modules Transistor 1MBI900VXA-120PC-54 1MBI200HH-120L-50 1MBI900V-120-50 [May 26, 2026]
[May 26, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 1-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
