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PLC Signal Amplifier Module Conversion Input Optocoupler Isolation Transistor Tigger Voltage 24V
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241.

PLC Signal Amplifier Module Conversion Input Optocoupler Isolation Transistor Tigger Voltage 24V Open Details in New Window [Jun 03, 2026]

Product Description Industrial 16/32 Channel MOSFET Relay Module – PLC Amplification Module MOSFET signal conversion module is a solid-state switching device based on metal oxide semiconductor field-effect transistor ...

Company: Changzhou ZERO Intelligent Technology Co., Ltd.

Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off
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242.

Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off Open Details in New Window [Nov 28, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 230 V Collector- Emitter Voltage VCEO 230 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 15 A Base Current IB 1.5 A 3PN ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

BTA16 600bw Mosfet N-Channel Transistor 600V 170A to-220ab Tube List BTA16-600bw GF15h60df ...
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243.

BTA16 600bw Mosfet N-Channel Transistor 600V 170A to-220ab Tube List BTA16-600bw GF15h60df ... Open Details in New Window [Mar 06, 2026]

Product Description Product features Single mesa structure (Single Mesa), Table glass passivation process, Voltage stability The ability of strong current shock resistance The applicable model: BTA12 The ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

NPN Epitaxial Silicon Transistor Tip41c to-220 to-252
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244.

NPN Epitaxial Silicon Transistor Tip41c to-220 to-252 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A *Collector Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126
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245.

Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBD 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base Current(continuous) VEBO 5 V Collector current IC 3 A Collector pulse current (TP < ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale NPN Epitaxial Silicon Transistor Tip122 to-220
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246.

Hot Sale NPN Epitaxial Silicon Transistor Tip122 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 5 A *Collector Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247
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247.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(T=25&ordm;C) 80 A Collector Current (Tc=100&ordm;C) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
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248.

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(T=25&ordm;C) 12 A Collector Current (Tc=100&ordm;C) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
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249.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(TJ=25&ordm;C) 60 A Collector Current (TJ=100&ordm;C) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
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250.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(TJ=25&ordm;C) 80 A Collector Current (TJ=100&ordm;C) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
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251.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(T=25&ordm;C) 80 A Collector Current (Tc=100&ordm;C) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247
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252.

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(T=25&ordm;C) 80 A Collector Current (Tc=100&ordm;C) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
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253.

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;20 V Collector Current IC(T=25&ordm;C) 120 A Collector Current (Tc=100&ordm;C) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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254.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(T=25&ordm;C) 40 A Collector Current (Tc=100&ordm;C) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
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255.

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current (TJ=100&ordm;C) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd