Jiangsu Profile
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Product List
376. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100 to-220 
[Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
377. 160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
378. 80A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70 to-220 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DH100P70/DH100P70I/DH100P70E DH100P70F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
379. 7A 650V N-Channel Enhancement Mode Power Mosfet F7n65 to-220f [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
380. Insulated Gate Bipolar Transistor IGBT G70n65D to-247 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
381. 40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH100P40/DH100P40I/DH100P40E DH100P40F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
382. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10 to-220c [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS037N10 DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
383. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
384. Dh065n06, to-220, 65A 60V N-Channel Enhancement Mode Power Mosfet [Dec 31, 2025]
[Dec 31, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
385. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06D to-252 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
386. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90 to-3pn [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
387. Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
388. 90A 200V N-Channel Enhancement Mode Power Mosfet Dh100n20d to-3pn [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
389. 150A 150V N-Channel Enhancement Mode Power Mosfet DSG059n15na [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
390. 61A 60V N-Channel Enhancement Mode Power Mosfet Dh16n06 to-220 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N06 DHF16N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
