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511. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06D to-252 
[Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
512. Hot Sale 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
513. Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
514. 90A 200V N-Channel Enhancement Mode Power Mosfet Dh100n20d to-3pn [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
515. 150A 150V N-Channel Enhancement Mode Power Mosfet DSG059n15na [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
516. 61A 60V N-Channel Enhancement Mode Power Mosfet Dh16n06 to-220 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N06 DHF16N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
517. 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
518. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
519. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
520. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
521. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [Dec 31, 2025]
[Dec 31, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
522. 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
523. 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
524. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85 to-220c [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...
525. 640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
