Jiangsu Profile
Famous Export Brand
Product List
466. Mds 55A 1600V Power Semiconductor Module Bridge Rectifier 
[Aug 16, 2023]
[Aug 16, 2023] Product Description Quick Review thyristors are widely used in converter equipment, motor excitation, speed regulation, voltage regulation, frequency regulation, temperature regulation and other contactless ...
467. 68V N-Channel Trench Power Mosfet to-263 [Jan 06, 2026]
[Jan 06, 2026]
Company: Wuxi Kingful Corporation., Ltd
468. 68V 82A N-Channel Trench Power Mosfet to-252 Sjd68n058 [Dec 30, 2025]
[Dec 30, 2025]
Company: Wuxi Kingful Corporation., Ltd
469. DIODE DSEI 2x61-12B [Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
470. MOSFET IXFN38N100Q2 [Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
471. 600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/E2N60/B2N60/D2N60 F2N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
472. 60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
473. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90 to-3pn [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
474. 4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
475. 115A 100V N-Channel Enhancement Mode Power Mosfet D100n10 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...
476. 5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
477. 650V 12A N-Channel Enhancement Mode Power Mosfet F12n65 to-220f [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
478. Insulated Gate Bipolar Transistor IGBT G60t65D to-3p [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
479. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
480. 70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
