Jiangsu Profile
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Product List
316. 772m 5-Inch Medium-Power Transistor Chips/Silicon Wafer 
[Dec 09, 2020]
[Dec 09, 2020] Die Size 1.08mm×1.08mm BVCEO -30V BVCBO -50V BVEBO -7V IC -3A hFE 100~400 VCE(sat) -0.5V fT 50MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
317. D965 5-Inch Medium Power Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.08mm×1.08mm BVCEO 20V BVCBO 40V BVEBO 7V IC 5A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
318. D965s 5-Inch Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.89mm×0.89mm BVCEO 20V BVCBO 40V BVEBO 7V IC 4A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
319. 2222A 5-Inch Fast Switching Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.46mm×0.46mm BVCEO 40V BVCBO 75V BVEBO 6V IC 0.6A hFE 100~300 VCE(sat) 1V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
320. Bc807 5-Inch High Frequency Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.53mm×0.53mm BVCEO -500V BVCBO -45V BVEBO -6V IC -0.5A hFE 125~600 VCE(sat) -0.65V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
321. 11005s 4-Inch NPN High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
322. P2.0 4-Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2000μ m×2000μ m Size of Bonding Pad Base 430μ m×620μ m Emitter 430μ m×620μ m Thickness 270±20μm Scribe Width 80μm Metallization Front: Al ...
323. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
324. P1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
325. P1.8 4-Inch Power Transistor Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1780μ m×1780μ m Size of Bonding Pad Base 495μ m×495μ m Emitter 495μ m×495μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
326. 882m 5-Inch Medium-Power Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1..08mm×1.08mm BVCEO 30V IC 3A BVCBO/BVEBO 30V/7V hFE Min.:100 Max:400 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
327. Screw Terminal Capacitors [Dec 28, 2024]
[Dec 28, 2024] JUNZL factory was established in 1997. We have 27 years experience of producing capacitors and JUNZL Capacitor is a well-established capacitor manufacturer company. We have 200 employees Including 65 technical ...
328. Heat Energy Surge Wire Woundfusible Resistor [Aug 07, 2014]
[Aug 07, 2014] 1. The voltage type wire wound fusible resistor can provide reliable fusing behavior stable performance and endurance to surge voltage. 2. Please contact for more information.
329. Silicon Metal Powder for Computer Microchips, Transistors and Solar Cells [Nov 12, 2025]
[Nov 12, 2025] Third Party Test Report,SGS Reports Silicon Metal Powder Specifications: Silicon Metal Powder ...
Company: Lianyungang Chemsize International Trading Co., Ltd.
330. High Quality Cooling Plate for MOS Transistor [Apr 03, 2025]
[Apr 03, 2025] Product Description PRODUCT SPECIFICATION FOR WATER COOLING PlATE NO. ITEM DESCRIPTION CONTENT 1 Product name Liquid cooling plate for High Power MOS 2 Material Aluminum Alloy 3 Dimension ...
