Jiangsu Profile
Product List
901. Hot Sale 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06 to-220 
[Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
902. Hot Sale 70V/6.3mΩ /100A N-Channel Enhancement Mode Power Mosfet Dh070n07 to-220c [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
903. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [Sep 01, 2025]
[Sep 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
904. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85 to-220c [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...
905. Hot Sale 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20d to-252 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
906. 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
907. 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
908. 140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...
909. 640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
910. Insulated Gate Bipolar Transistor IGBT G15n120d to-247 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
911. 15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
912. Insulated Gate Bipolar Transistor IGBT G70n65D to-247 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
913. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
914. 25A 100V N-Channel Enhancement Mode Power Mosfet 25n10 to-220 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
915. Insulated Gate Bipolar Transistor IGBT G30n120d to-247 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
