Jiangsu Profile
Product List
901. 120A 100V N-Channel Enhancement Mode Power MOSFET DH10H055R TO-220 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
902. 50A 150V N-Channel Enhancement Mode Power MOSFET DH50N15 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
903. 80A 100V P-Channel Enhancement Mode Power MOSFET DH100P70 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P70/DH100P70I/DH100P70E DH100P70F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
904. 100A 68V N-Channel Enhancement Mode Power MOSFET DH3205A TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
905. 200A 85V N-Channel Enhancement Mode Power MOSFET DHS035N88 TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
906. 250A 88V N-Channel Enhancement Mode Power MOSFET DHS020N88 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
907. 70A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
908. 5A 500V N-Channel Enhancement Mode Power MOSFET F5N50 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
909. 20A 500V N-Channel Enhancement Mode Power MOSFET F20N50 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
910. 40A 600V Insulated Gate Bipolar Transistor IGBT G40T60D TO-3PN [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
911. 80A 75V N-Channel Enhancement Mode Power MOSFET D7509 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...
912. 23A 500V N-Channel Enhancement Mode Power MOSFET 23N50D TO-3PN [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
913. 110A 85V N-Channel Enhancement Mode Power MOSFET DHS055N85E TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
914. 13A 650V N-Channel Super Junction Power MOSFET DHFSJ13N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
915. 130A 40V N-Channel Enhancement Mode Power MOSFET DH025N04E TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
