Jiangsu Profile
Famous Export Brand
Product List
601. 112A 68V N-Channel Enhancement Mode Power MOSFET DH100N06 TO-220C 
[Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...
602. 120A 40V N-Channel Enhancement Mode Power MOSFET DH045N04D TO-252 [Oct 29, 2026]
[Oct 29, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
603. 12A 100V N-Channel Enhancement Mode Power MOSFET DHD12N10 TO-252 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...
604. 90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
605. 2A 600V N-Channel Enhancement Mode Power MOSFET D2N60 TO-252B [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT D2N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 0A (T=100ºC) 1.3 A Drain ...
606. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06 TO-220 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
607. 10A 700V N-Channel Enhancement Mode Power MOSFET D10N70 TO-252B [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
608. 100A 60V N-Channel Enhancement Mode Power MOSFET DH066N06D TO-252B [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
609. 3A 800V N-Channel Enhancement Mode Power MOSFET F3N80 TO-220F [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
610. 80A 100V P-Channel Enhancement Mode Power MOSFET DH100P70 TO-220 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH100P70/DH100P70I/DH100P70E DH100P70F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
611. 88A 60V N-Channel Enhancement Mode Power MOSFET DH070N06 TO-220 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
612. 5A 650V N-Channel Enhancement Mode Power MOSFET F5N65 TO-220F [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT F5N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
613. 20A 600V N-Channel Enhancement Mode Power MOSFET 20N60 TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
614. 180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
615. 20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20D TO-252 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
