Jiangsu Profile
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Product List
691. 70A 120V N-Channel Enhancement Mode Power MOSFET DSG140N12N3 TO-220C 
[Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
692. 100A 60V N-Channel Enhancement Mode Power MOSFET DH066N06D TO-252B [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
693. 180A 135V N-Channel Enhancement Mode Power MOSFET DSG045N14N TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
694. 13A 650V N-Channel Super Junction Power MOSFET DHSJ13N65 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
695. 70A 650V N-Channel Super Junction Power MOSFET DJC070N65M2 TO-247 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
696. 120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06B TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...
697. 200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
698. 4.8A 650V N-Channel Super Junction Power MOSFET DHBSJ5N65 TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
699. 83A 600V N-Channel Super Junction Power MOSFET DJC032N60F TO-247 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...
700. 180A 100V N-Channel Enhancement Mode Power MOSFET DSG031N10N3 TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...
701. 200A 85V N-Channel Enhancement Mode Power MOSFET DHS035N88 TO-220 [Aug 13, 2026]
[Aug 13, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
702. 110A 200V N-Channel Enhancement Mode Power MOSFET DSE108N20NA TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
703. 130A 85V N-Channel Enhancement Mode Power MOSFET DH050N85E TO-263 [Aug 13, 2026]
[Aug 13, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
704. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65D TO-3P [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
705. 120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
