Jiangsu Profile
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Product List
691. Dh020n03, to-220, 200A 30V N-Channel Enhancement Mode Power Mosfet 
[Jun 25, 2025]
[Jun 25, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...
692. 4A 800V N-Channel Enhancement Mode Power Mosfet F4n80 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 4N80/I4N80/E4N80 F4N80 Drian-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...
693. Dhs130n10d to-252 130A 100V N-Channel Enhancement Mode Power Mosfet [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
694. 110A 30V N-Channel Enhancement Mode Power Mosfet 110n03 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS 30 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
695. 600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
696. 70A 100V N-Channel Enhancement Mode Power Mosfet ED70n10 to-263 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
697. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10I to-262 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
698. 12A 100V N-Channel Enhancement Mode Power Mosfet DHD12n10 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...
699. 8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
700. 11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
701. 4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
702. Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
703. B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
704. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
705. 3A 800V N-Channel Enhancement Mode Power Mosfet F3n80 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
