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180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c
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691.

180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 30V N-Channel Enhancement Mode Power Mosfet Dh028n03D to-252b
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692.

145A 30V N-Channel Enhancement Mode Power Mosfet Dh028n03D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH028N0 3F DH028N03 /DH028N03E DH028N03B/DH028N03D Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power Mosfet 8n50 to-220c
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693.

8A 500V N-Channel Enhancement Mode Power Mosfet 8n50 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c
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694.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263
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695.

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn
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696.

200V/11mΩ /110A N-Mosfet Dsn108n20n to-3pn Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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697.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
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698.

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252
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699.

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 Open Details in New Window [Nov 08, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
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700.

150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c
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701.

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263
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702.

120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
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703.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b
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704.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263
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705.

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd