Jiangsu Profile

Famous Export Brand

Product List
766. Brand New Original Nell Module in Stock
[Aug 29, 2024]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
767. Sirectifier Diode&Thyristor&Rectifier Full Range in Stock
[Aug 29, 2024]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
768. Supply of Thyristor Modules in Stock
[Aug 29, 2024]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
769. Mds 55A 1600V Power Semiconductor Module Bridge Rectifier
[Aug 16, 2023]

Product Description Quick Review thyristors are widely used in converter equipment, motor excitation, speed regulation, voltage regulation, frequency regulation, temperature regulation and other contactless ...
770. 1SMA4728A-1SMA4764A SMA Zener Diodes
[Dec 31, 2020]

ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
771. Macmic Diode Original Supply
[Nov 26, 2024]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
772. Yj Spot Supply of Diode&IGBT Modules
[Nov 26, 2024]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
773. Poseico Thyristors&Diodes in Stock
[Aug 30, 2024]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
774. Zg Rectifuer 1SMA4728A-1SMA4764A Zener Diode
[Nov 22, 2024]

The company introduced a full set of advanced equipment and scientific management system from abroad. The quality of the products enjoys a good reputation in the both domestic and foreign markets. The company has ...
775. DIODE DSEI 2x61-12B
[Oct 29, 2022]

Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
776. MOSFET IXFN38N100Q2
[Oct 29, 2022]

Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
777. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252
[May 17, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
778. 10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262
[May 17, 2025]

PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
779. DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet
[May 17, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...
780. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet
[May 17, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
