Jiangsu Profile
Product List
886. 20A 60V P-Channel Enhancement Mode Power MOSFET DHD9Z24 TO-252B 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
887. 18A 650V N-Channel Enhancement Mode Power MOSFET F18N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F18N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 0A (T=100ºC) 11 A Drain ...
888. 110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
889. 100A 100V N-Channel Enhancement Mode Power MOSFET DSG070N10L3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
890. 7A 650V N-Channel Enhancement Mode Power MOSFET DHD7N65 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
891. 180A 85V N-Channel Enhancement Mode Power MOSFET DSD040N08N3A TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
892. 52A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15F TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
893. 60A 60V N-Channel Enhancement Mode Power MOSFET DHD015N06 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 45 A Drain ...
894. 20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
895. 120A 90V N-Channel Enhancement Mode Power MOSFET DH90N045R TO-220 [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
896. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65D TO-3P [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
897. 120A 80V N-Channel Enhancement Mode Power MOSFET DSE047N08N3 TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
898. 20A 500V N-Channel Enhancement Mode Power MOSFET 20N50B TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50/20N50B F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
899. 80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
900. 120A 60V N-Channel Enhancement Mode Power MOSFET D3205 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D3205/ID3205/ED3205 FD3205 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
