Jiangsu Profile
Product List
886. 8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
887. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
888. 10A 800V N-Channel Enhancement Mode Power Mosfet F10n80 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 10N80/I10N80/E10N80 F10N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
889. 140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...
890. 600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/E2N60/B2N60/D2N60 F2N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
891. 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85D to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
892. 4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
893. F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 16N60 F16N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A Single Pulse Avalanche ...
894. 11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
895. 2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
896. 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
897. 7A 650V N-Channel Super Junction Power Mosfet Dhdsj7n65 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
898. 80A 60V N-Channel Enhancement Mode Power Mosfet E80n06 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
899. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100b to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
900. 160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
