Jiangsu Profile
Product List
856. 5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c 
[Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
857. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 [Jul 02, 2025]
[Jul 02, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
858. 650V 12A N-Channel Enhancement Mode Power Mosfet F12n65 to-220f [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
859. 60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
860. 50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
861. 145A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04p Dfn5*6-8 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
862. 40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DH100P40/DH100P40I/DH100P40E DH100P40F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
863. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
864. 150A 100V N-Channel Enhancement Mode Power Mosfet Dh150n10 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
865. 70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
866. Hot Sale 88A 60V N-Channel Enhancement Mode Power Mosfet Dh070n06 to-220 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
867. Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
868. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
869. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
870. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Jul 02, 2025]
[Jul 02, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
