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50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw
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916.

50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252
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917.

85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07 to-220
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918.

80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 82V N-Channel Enhancement Mode Power Mosfet Dh8290 to-251
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919.

70A 82V N-Channel Enhancement Mode Power Mosfet Dh8290 to-251 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh3205A to-220 **%off
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920.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh3205A to-220 **%off Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet D3205 to-220
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921.

120A 60V N-Channel Enhancement Mode Power Mosfet D3205 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT D3205/ID3205/ED3205 FD3205 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220
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922.

120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20b to-251
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923.

20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20b to-251 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 60V P-Channel Enhancement Mode Power Mosfet Dh9z24 to-220
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924.

10A 60V P-Channel Enhancement Mode Power Mosfet Dh9z24 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 80V N-Channel Enhancement Mode Power Mosfet Dh075n08d to-252b
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925.

85A 80V N-Channel Enhancement Mode Power Mosfet Dh075n08d to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c
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926.

5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06p Dfn5*6-8L
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927.

145A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06p Dfn5*6-8L Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

54A 30V P-Channel Enhancement Mode Power Mosfet Dh130p03D to-252
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928.

54A 30V P-Channel Enhancement Mode Power Mosfet Dh130p03D to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH130P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -54 A (T=100ºC) -38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 800V N-Channel Super Junction Power Mosfet Dhdsj7n80 to-252
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929.

7A 800V N-Channel Super Junction Power Mosfet Dhdsj7n80 to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHSJ7N80/DHISJ7N80/DHESJ7N80/DHBSJ7N80/DHDSJ7N80 DHFSJ7N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet DHD10n10 to-252
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930.

12A 100V N-Channel Enhancement Mode Power Mosfet DHD10n10 to-252 Open Details in New Window [Jun 24, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 12 A BVGSS ±20 V VTH 1.5 2.6 V EAS - - 16 mJ Ptot - - 28 W Rdson 76 - 95 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd