Jiangsu Profile
Product List
811. Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 45 A Drain ...
812. 40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
813. Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D [Sep 02, 2025]
[Sep 02, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
814. Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
815. Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
816. Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
817. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
818. 180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252 [Apr 20, 2026]
[Apr 20, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
819. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Apr 20, 2026]
[Apr 20, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
820. 21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...
821. 11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
822. 11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
823. Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
824. 18A 200V N-Channel Enhancement Mode Power Mosfet Dh640 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
825. Insulated Gate Bipolar Transistor IGBT G30n60d to-247 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
