Jiangsu Profile
Product List
811. 12A 100V N-Channel Enhancement Mode Power Mosfet DHD12n10 to-252 
[Apr 01, 2025]
[Apr 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...
812. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252 [Mar 24, 2025]
[Mar 24, 2025] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
813. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn [Mar 24, 2025]
[Mar 24, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
814. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f [Mar 24, 2025]
[Mar 24, 2025] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
815. Dh020n03, to-220, 200A 30V N-Channel Enhancement Mode Power Mosfet [Mar 24, 2025]
[Mar 24, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...
816. Dhs020n85 to-220 180A 85V N-Channel Enhancement Mode Power Mosfet [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N85/DHS020N85E DHS020N85D/DHS020N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
817. 10A 600V N-Channel Enhancement Mode Power Mosfet F10n60 to-220f [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
818. 640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet [Mar 24, 2025]
[Mar 24, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
819. Insulated Gate Bipolar Transistor IGBT G70n65D to-247 [Apr 01, 2025]
[Apr 01, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
820. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85e to-263 [Feb 22, 2025]
[Feb 22, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
821. 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252 [Apr 01, 2025]
[Apr 01, 2025] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
822. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jun 24, 2024]
[Jun 24, 2024] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
823. Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
824. Hot Sale 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20d to-252 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
825. 740 to-220 10A 400V N-Channel Enhancement Mode Power Mosfet [Feb 22, 2025]
[Feb 22, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
