Jiangsu Profile
Product List
811. 18A 500V N-Channel Enhancement Mode Power MOSFET F18N50 TO-220F 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
812. 140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
813. 21A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10LB TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
814. 5A 600V N-Channel Enhancement Mode Power MOSFET F5N60 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
815. 120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
816. 5A 500V N-Channel Enhancement Mode Power MOSFET D5N50 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
817. 0.8A 600V N-Channel Enhancement Mode Power MOSFET B1N60 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
818. 60A 30V N-Channel Enhancement Mode Power MOSFET DH081N03D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
819. 120A 80V N-Channel Enhancement Mode Power MOSFET DSG047N08N3 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
820. 7.5A 650V N-Channel Enhancement Mode Power MOSFET 8N65 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.5 A (T=100ºC) 4.8 A Drain ...
821. 100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07B TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
822. 240A 100V N-Channel Enhancement Mode Power MOSFET DHS025N10 TO-220C [Jul 21, 2026]
[Jul 21, 2026] Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
823. 140A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
824. 12A 100V N-Channel Enhancement Mode Power MOSFET DH850N10B TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
825. 3A 900V N-Channel Enhancement Mode Power MOSFET DH3N90 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
