Jiangsu Profile
Product List
826. 150A 100V N-Channel Enhancement Mode Power Mosfet Dh150n10 to-220 
[May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
827. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
828. 60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 [Apr 01, 2025]
[Apr 01, 2025] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
829. -60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06D to-252 [May 17, 2025]
[May 17, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 110 W Rdson 14 - 720 mΩ ...
830. 160A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03p Dfn5*6-8 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 160 A (T=100ºC) 112 A Drain ...
831. Dh240n06ld to-252 30A 60V N-Channel Enhancement Mode Power Mosfet [Apr 01, 2025]
[Apr 01, 2025] PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
832. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
833. 15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
834. 115A 100V N-Channel Enhancement Mode Power Mosfet D100n10 to-220 [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...
835. 70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
836. 30A 60V P-Channel Enhancement Mode Power Mosfet Dh300p06D to-252 [Mar 24, 2025]
[Mar 24, 2025] PARAMETER SYMBOL VALUE UNIT DH300P06/DH300P06I/DH300P06E/DH300P06B/DH300P06D DH300P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
837. Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06D to-252 [May 17, 2025]
[May 17, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
838. Hot Sale 180A 80V N-Channel Enhancement Mode Power Mosfet Dh029n08 to-220 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DH029N08/DHI029N08/DHE029N08 DH029N08D DH029N08B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
839. Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
840. Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
