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50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b
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826.

50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power Mosfet D1404 to-220
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827.

200A 40V N-Channel Enhancement Mode Power Mosfet D1404 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT D1404/ID1404/ED1404 FD1404 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 650V N-Channel Enhancement Mode Power Mosfet B7n65 to-251
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828.

7A 650V N-Channel Enhancement Mode Power Mosfet B7n65 to-251 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6
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829.

100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6 Open Details in New Window [Apr 20, 2026]

PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 85V N-Channel Enhancement Mode Power Mosfet DSP032n08na Dfn5X6
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830.

170A 85V N-Channel Enhancement Mode Power Mosfet DSP032n08na Dfn5X6 Open Details in New Window [Apr 20, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power Mosfet Dh80n08 to-220
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831.

80A 80V N-Channel Enhancement Mode Power Mosfet Dh80n08 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet DSG108n20na to-220c
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832.

200V/11mΩ /110A N-Mosfet DSG108n20na to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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833.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b
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834.

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
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835.

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c
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836.

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c
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837.

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b
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838.

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f
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839.

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18b to-251b
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840.

18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18b to-251b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd