Jiangsu Profile
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Product List
676. 150A 80V N-Channel Enhancement Mode Power MOSFET E150N08 TO-263 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 150N08/I150N08/E150N08 F150N08 Maximum Drian-Source DC Voltage VDS 80 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
677. 3A 800V N-Channel Enhancement Mode Power MOSFET F3N80 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
678. 25A 120V Insulated Gate Bipolar Transistor IGBT G25T120D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 50 A Collector Current (Tc=100ºC) 25 A Pulsed ...
679. 10A 800V N-Channel Enhancement Mode Power MOSFET F10N80 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 10N80/I10N80/E10N80 F10N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
680. 13A 500V N-Channel Enhancement Mode Power MOSFET F13N50 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
681. 120A 55V N-Channel Enhancement Mode Power MOSFET DH3205T TO-220C [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 2100 mJ Ptot - - 320 W Rdson 6.8 - 8.0 mΩ ...
682. 85A 68V N-Channel Enhancement Mode Power MOSFET DH065N07 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
683. 256A 30V N-Channel Enhancement Mode Power MOSFET DH012N03P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH012N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 256 A (T=100ºC) 181 A Drain ...
684. 63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
685. 85A 80V N-Channel Enhancement Mode Power MOSFET DH075N08 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
686. 70A 100V N-Channel Enhancement Mode Power MOSFET FD70N20 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
687. 50A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LD TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
688. 12A 700V N-Channel Enhancement Mode Super Junction Power MOSFET DJF360N70T TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A Single Pulse Avalanche ...
689. 7A 700V N-Channel Enhancement Mode Power MOSFET F7N70 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
690. 7A 700V N-Channel Enhancement Mode Power MOSFET D7N70 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
