Jiangsu Profile
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Product List
676. 120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C 
[Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...
677. 70A 82V N-Channel Enhancement Mode Power MOSFET DH8290 TO-251 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...
678. 80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
679. 145A 60V N-Channel Enhancement Mode Power MOSFET 6-8L DFN5 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...
680. 150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
681. 11A 650V N-Channel Super Junction Power MOSFET DHDSJ11N65 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
682. 7.5A 600V N-Channel Enhancement Mode Power MOSFET 8N60 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
683. 7.5A 600V N-Channel Enhancement Mode Power MOSFET F8N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
684. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
685. 18A 200V N-Channel Enhancement Mode Power MOSFET DH640 TO-220 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
686. 60A 100V N-Channel Enhancement Mode Power MOSFET DH0159 TO-220C [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH0159/DHE015 9/DHB0159/DHD0159 DHF0159 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
687. 120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06B TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...
688. 200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
689. 4.8A 650V N-Channel Super Junction Power MOSFET DHBSJ5N65 TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
690. 83A 600V N-Channel Super Junction Power MOSFET DJC032N60F TO-247 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...
