Jiangsu Profile
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Product List
646. 240A 100V N-Channel Enhancement Mode Power MOSFET DSE022N10N3 TO-263 
[Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
647. 180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
648. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
649. 355A 35V N-Channel Enhancement Mode Power MOSFET DSP007N03LA DFN5X6 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...
650. 180A 85V N-Channel Enhancement Mode Power MOSFET DSD040N08N3A TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
651. 120A 90V N-Channel Enhancement Mode Power MOSFET DH90N045R TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
652. 170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
653. 30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGF30F65M2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...
654. 50A 650V Trench FS IGBT G50T65D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
655. 100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...
656. 160A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGCP160H65L2 TO-247PLUS [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...
657. 75A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F120M2 TO-247PLUS [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
658. 360A 85V N-Channel Enhancement Mode Power MOSFET DSU011N08N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...
659. 235A 30V N-Channel Enhancement Mode Power MOSFET DH012N03U TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 235 A (T=100ºC) 148 A Drain ...
660. 272A 100V N-Channel Enhancement Mode Power MOSFET DSU024N10N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...
