Jiangsu Profile
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Product List
646. 75A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F120M2 TO-247PLUS 
[Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
647. 7.5A 600V N-Channel Enhancement Mode Power MOSFET F8N60 TO-220F [Jul 21, 2026]
[Jul 21, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
648. 7.5A 600V N-Channel Enhancement Mode Power MOSFET 8N60 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
649. 11A 650V N-Channel Super Junction Power MOSFET DHDSJ11N65 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
650. 9A 200V N-Channel Enhancement Mode Power MOSFET D630 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
651. 40A 100V P-Channel Enhancement Mode Power MOSFET DH100P40 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P40/DH100P40I/DH100P40E DH100P40F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
652. 145A 60V N-Channel Enhancement Mode Power MOSFET DH045N06D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
653. 140A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
654. 4A 600V N-Channel Enhancement Mode Power MOSFET B4N60 TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
655. 61A 60V N-Channel Enhancement Mode Power MOSFET DH16N06 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N06 DHF16N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
656. 100A 60V N-Channel Enhancement Mode Power MOSFET DH065N06D TO-252 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
657. 54A 30V P-Channel Enhancement Mode Power MOSFET DH130P03D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH130P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -54 A (T=100ºC) -38 A Drain ...
658. 80A 80V N-Channel Enhancement Mode Power MOSFET DHD80N08 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
659. 50A 60V N-Channel Enhancement Mode Power MOSFET DHD50N06 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHD50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
660. 85A 30V P-Channel Enhancement Mode Power MOSFET DHD85P03 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...
