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68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b
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571.

68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220
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572.

100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 200V N-Channel Enhancement Mode Power Mosfet Dh640
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573.

18A 200V N-Channel Enhancement Mode Power Mosfet Dh640 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G30n60d to-247
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574.

Insulated Gate Bipolar Transistor IGBT G30n60d to-247 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b
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575.

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f
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576.

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18b to-251b
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577.

18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18b to-251b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c
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578.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c
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579.

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65
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580.

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b
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581.

60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b
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582.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c
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583.

220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b
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584.

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b
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585.

-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd