Jiangsu Profile
Famous Export Brand
Product List
631. Macmic Diode Original Supply 
[Dec 09, 2025]
[Dec 09, 2025] We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
632. Poseico Thyristors&Diodes in Stock [Aug 30, 2024]
[Aug 30, 2024] We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
633. Bom IC in Stock New Original Integrated Circuit Chip Bom List Rfq Electronic Components ... [Mar 10, 2026]
[Mar 10, 2026] Bom in Stock New Original Integrated Circuit Chip Bom List Rfq Electronic Components Consultation More Discounts
634. 68V N-Channel Trench Power Mosfet to-263 [Jan 06, 2026]
[Jan 06, 2026]
Company: Wuxi Kingful Corporation., Ltd
635. DIODE DSEI 2x61-12B [Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
636. MOSFET IXFN38N100Q2 [Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
637. 68V 82A N-Channel Trench Power Mosfet to-252 Sjd68n058 [Dec 30, 2025]
[Dec 30, 2025]
Company: Wuxi Kingful Corporation., Ltd
638. 15A 40V P-Channel Enhancement Mode Power MOSFET DHD15P04 SOP-8 [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
639. Electronic Component 900V Trench IGBT Module Transistor Replacement for Ipw90r120c3 & Stw28n90K5 [Jul 07, 2026]
[Jul 07, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to ...
Company: Nova Import & Export Trade Co., Ltd
640. 11A 650V N-Channel Super Junction Power MOSFET DHBSJ11N65 TO-251B [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
641. 50A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT G50N120D TO-264 [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
642. 50A 650V Trench FS IGBT G50T65D TO-3PN [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
643. 30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGF30F65M2 [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...
644. 160A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGCP160H65L2 TO-247PLUS [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...
645. 40A 40V N-Channel Enhancement Mode Power MOSFET DSR070N04LA [Jul 31, 2026]
[Jul 31, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...
