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631. 15A 60V N-Channel Enhancement Mode Power Mosfet Dhz24 to-220 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHZ24/DHIZ24/DHEZ24/DHBZ24/DHDZ24 DHFZ24 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
632. 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
633. -60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06D to-252 [Jul 02, 2025]
[Jul 02, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 110 W Rdson 14 - 720 mΩ ...
634. 160A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03p Dfn5*6-8 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 160 A (T=100ºC) 112 A Drain ...
635. 210A 60V N-Channel Enhancement Mode Power Mosfet Dhi027n06 to-262 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH027N06//DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Drian Voltage VGSS ±25 V Drain ...
636. Dh3205p to-220c 110A 55V Mosfets P-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 110 A BVGSS ±20 V VTH 2 4 V EAS - - 1440 mJ Ptot - - 200 W Rdson 6.8 - 8.0 mΩ ...
637. 4n65 to-220 4A 650V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH80N06/DHI85N08/DHE85N08 DHF85N08 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
638. 256A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03p Dfn5*6-8 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH012N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 256 A (T=100ºC) 181 A Drain ...
639. 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03p Dfn5*6-8 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
640. Hot Sale 18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18d to-252 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...
641. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc50f65m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
642. 5A 500V N-Channel Enhancement Mode Power Mosfet 5n50 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
643. -60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06f to-220f [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 30 W Rdson 14 - 720 mΩ ...
644. 15A 40V P-Channel Enhancement Mode Power Mosfet DHD15p04 Sop-8 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
645. 10.6A 700V N-Channel Super Junction Power Mosfet Djf420n70t to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...
