Jiangsu Profile
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Product List
631. 90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
632. 63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
633. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...
634. 120A 30V N-Channel Enhancement Mode Power MOSFET DH030N03D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
635. 70A 82V N-Channel Enhancement Mode Power MOSFET DH8290 TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...
636. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
637. 150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
638. 145A 60V N-Channel Enhancement Mode Power MOSFET 6-8L DFN5 [Aug 08, 2026]
[Aug 08, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...
639. 80A 75V N-Channel Enhancement Mode Power MOSFET D7509 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...
640. 250A 88V N-Channel Enhancement Mode Power MOSFET DHS020N88 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
641. Electronic Component 900V Trench IGBT Module Transistor Replacement for Ipw90r120c3 & Stw28n90K5 [Sep 15, 2026]
[Sep 15, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to ...
Company: Nova Import & Export Trade Co., Ltd
642. 650V 75A Low-Loss IGBT Transistor RF-Ready Power Transistor High-Frequency Signal Switch [Aug 06, 2026]
[Aug 06, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a pro team with 15+ years in power semiconductors, NOVA is dedicated to R&D and innovation of advanced devices. Our high-voltage MOSFETs use multi-layer ...
Company: Nova Import & Export Trade Co., Ltd
643. 650V 50A Wide-Temperature IGBT Power Transistor N-Channel Mosfets Transistor High-Speed Switch ... [Aug 06, 2026]
[Aug 06, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Partnered with a design and operation team with 15+ years in power semiconductors, NOVA is dedicated to R&D and innovation of advanced power semiconductor devices. Our ...
Company: Nova Import & Export Trade Co., Ltd
644. 60A 100V N-Channel Enhancement Mode Power MOSFET DSG150N10L3 TO-220 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
645. 100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252 [Sep 05, 2026]
[Sep 05, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
