Jiangsu Profile
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Product List
616. 40A 30V N-Channel Enhancement Mode Power MOSFET DHD80N03 TO-252B 
[Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
617. 30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
618. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06D TO-252 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
619. 100A 70V N-Channel Enhancement Mode Power MOSFET DH070N07 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
620. 50A 40V N-Channel Enhancement Mode Power MOSFET 50N04 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
621. 100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252B [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
622. 100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
623. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
624. 240A 100V N-Channel Enhancement Mode Power MOSFET DSC018N10N TO-247 [Aug 13, 2026]
[Aug 13, 2026] DSC018N10N 100V/1.5mΩ/240A N-MOSFET Company: DONGHAI Features Low on resistance Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Pb-Free plating / ...
625. 180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
626. 80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
627. 120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...
628. 18A 200V N-Channel Enhancement Mode Power MOSFET DH640 TO-220 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
629. 9A 900V N-Channel Enhancement Mode Power MOSFET 9N90 TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
630. 120A 80V N-Channel Enhancement Mode Power MOSFET DSG047N08N3 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
