Jiangsu Profile
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Product List
616. 110A 200V N-Channel Enhancement Mode Power MOSFET DSN108N20N TO-3PN 
[Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
617. 96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
618. 200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03 TO-220 [Sep 30, 2026]
[Sep 30, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...
619. 240A 100V N-Channel Enhancement Mode Power MOSFET DSC018N10N TO-247 [Aug 13, 2026]
[Aug 13, 2026] DSC018N10N 100V/1.5mΩ/240A N-MOSFET Company: DONGHAI Features Low on resistance Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Pb-Free plating / ...
620. 40A 30V N-Channel Enhancement Mode Power MOSFET DHD80N03 TO-252B [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
621. 100A 70V N-Channel Enhancement Mode Power MOSFET DH070N07 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
622. 100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
623. 9A 900V N-Channel Enhancement Mode Power MOSFET 9N90 TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
624. 120A 80V N-Channel Enhancement Mode Power MOSFET DSG047N08N3 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
625. 120A 30V N-Channel Enhancement Mode Power MOSFET DH030N03D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
626. 80A 80V N-Channel Enhancement Mode Power MOSFET DH80N08 TO-220 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
627. 150A 30V N-Channel Enhancement Mode Power MOSFET DH025N03 TO-220 [Oct 29, 2026]
[Oct 29, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
628. 80A 75V N-Channel Enhancement Mode Power MOSFET D7509 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...
629. 250A 88V N-Channel Enhancement Mode Power MOSFET DHS020N88 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
630. 650V 75A Low-Loss IGBT Transistor RF-Ready Power Transistor High-Frequency Signal Switch [Aug 06, 2026]
[Aug 06, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a pro team with 15+ years in power semiconductors, NOVA is dedicated to R&D and innovation of advanced devices. Our high-voltage MOSFETs use multi-layer ...
Company: Nova Import & Export Trade Co., Ltd
