Jiangsu Profile
Famous Export Brand
Product List
661. 225A 135V N-Channel Enhancement Mode Power MOSFET DSU035N14N3 TOLL 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...
662. 40A 40V N-Channel Enhancement Mode Power MOSFET DSR070N04LA DFN3*3 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...
663. 10A 800V N-Channel Enhancement Mode Power MOSFET F10N80 TO-220F [Oct 19, 2026]
[Oct 19, 2026] PARAMETER SYMBOL VALUE UNIT 10N80/I10N80/E10N80 F10N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
664. 90A 200V N-Channel Enhancement Mode Power MOSFET DH100N20D TO-3PN [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
665. 200A 40V N-Channel Enhancement Mode Power MOSFET D1404 TO-220 [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT D1404/ID1404/ED1404 FD1404 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
666. 50A 40V N-Channel Enhancement Mode Power MOSFET 50N04 TO-220C [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
667. 25A 100V P-Channel Enhancement Mode Power MOSFET DH100P25D TO-252B [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT DH100P25/ DH100P25I/ DH100 P25E/ DH100P25B/ DH100P25D DH100P25F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
668. 18A 500V N-Channel Enhancement Mode Power MOSFET 18N50 TO-220C [Oct 29, 2026]
[Oct 29, 2026] PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
669. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06D TO-252 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
670. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06 TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...
671. 12A 650V N-Channel Enhancement Mode Power MOSFET 12N65 TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
672. 100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252B [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
673. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
674. 63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
675. 30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
