Jiangsu Profile
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Product List
661. 160A 90V N-Channel Enhancement Mode Power MOSFET DHE90N035R TO-263 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
662. 80A 60V N-Channel Enhancement Mode Power MOSFET E80N06 TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
663. 70A 100V N-Channel Enhancement Mode Power MOSFET ED70N10 TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
664. 20A 600V N-Channel Enhancement Mode Power MOSFET F20N60 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
665. 20A 900V N-Channel Enhancement Mode Power MOSFET 20N90D TO-3PN [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
666. 10A 600V N-Channel Enhancement Mode Power MOSFET 10N60 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
667. 25A 100V N-Channel Enhancement Mode Power MOSFET 25N10 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
668. 60A 100V N-Channel Enhancement Mode Power MOSFET 60N10 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
669. 10A 400V N-Channel Enhancement Mode Power MOSFET 740 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
670. 25A 100V N-Channel Enhancement Mode Power MOSFET D25N10 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
671. 5A 500V N-Channel Enhancement Mode Power MOSFET D830 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 830/D830 F830 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 5 A Total ...
672. 10A 60V P-Channel Enhancement Mode Power MOSFET DH9Z24 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
673. 180A 68V N-Channel Enhancement Mode Power MOSFET DHS026N06E TO-263 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
674. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
675. 70A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100E TO-263 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
