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Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252
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661.

Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b
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662.

Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS160N100D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 45 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
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663.

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D Open Details in New Window [Sep 02, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 180A 80V N-Channel Enhancement Mode Power Mosfet Dh029n08 to-220
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664.

Hot Sale 180A 80V N-Channel Enhancement Mode Power Mosfet Dh029n08 to-220 Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DH029N08/DHI029N08/DHE029N08 DH029N08D DH029N08B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252
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665.

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8
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666.

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH025N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220
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667.

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f
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668.

21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f Open Details in New Window [Apr 01, 2026]

PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet
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669.

D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Apr 01, 2026]

PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263
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670.

Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn
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671.

Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn Open Details in New Window [Mar 02, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6
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672.

100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6 Open Details in New Window [Apr 20, 2026]

PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 85V N-Channel Enhancement Mode Power Mosfet DSP032n08na Dfn5X6
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673.

170A 85V N-Channel Enhancement Mode Power Mosfet DSP032n08na Dfn5X6 Open Details in New Window [Apr 20, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b
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674.

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b
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675.

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd