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30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A TO-220C
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661.

30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A TO-220C Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

355A 35V N-Channel Enhancement Mode Power MOSFET DSP007N03LA DFN5X6
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662.

355A 35V N-Channel Enhancement Mode Power MOSFET DSP007N03LA DFN5X6 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 85V N-Channel Enhancement Mode Power MOSFET DSD040N08N3A TO-252
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663.

180A 85V N-Channel Enhancement Mode Power MOSFET DSD040N08N3A TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 90V N-Channel Enhancement Mode Power MOSFET DH90N045R TO-220
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664.

120A 90V N-Channel Enhancement Mode Power MOSFET DH90N045R TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6
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665.

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGF30F65M2 TO-247
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666.

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGF30F65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trench FS IGBT G50T65D TO-3PN
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667.

50A 650V Trench FS IGBT G50T65D TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6
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668.

100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGCP160H65L2 TO-247PLUS
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669.

160A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGCP160H65L2 TO-247PLUS Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F120M2 TO-247PLUS
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670.

75A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F120M2 TO-247PLUS Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

360A 85V N-Channel Enhancement Mode Power MOSFET DSU011N08N3A TOLL
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671.

360A 85V N-Channel Enhancement Mode Power MOSFET DSU011N08N3A TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

235A 30V N-Channel Enhancement Mode Power MOSFET DH012N03U TOLL
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672.

235A 30V N-Channel Enhancement Mode Power MOSFET DH012N03U TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 235 A (T=100ºC) 148 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

272A 100V N-Channel Enhancement Mode Power MOSFET DSU024N10N3A TOLL
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673.

272A 100V N-Channel Enhancement Mode Power MOSFET DSU024N10N3A TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

225A 135V N-Channel Enhancement Mode Power MOSFET DSU035N14N3 TOLL
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674.

225A 135V N-Channel Enhancement Mode Power MOSFET DSU035N14N3 TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 40V N-Channel Enhancement Mode Power MOSFET DSR070N04LA DFN3*3
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675.

40A 40V N-Channel Enhancement Mode Power MOSFET DSR070N04LA DFN3*3 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd