Jiangsu Profile
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Product List
706. 31A 600V N-Channel Super Junction Power MOSFET DJC099N60F TO-247 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...
707. 80A 60V N-Channel Enhancement Mode Power MOSFET DATD063N06N TO-252B [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...
708. 2A 600V N-Channel Enhancement Mode Power MOSFET D2N60 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT D2N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 0A (T=100ºC) 1.3 A Drain ...
709. 6A 900V N-Channel Enhancement Mode Power MOSFET F6N90 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 6 A (T=100ºC) 3.7 A Drain ...
710. 180A 85V N-Channel Enhancement Mode Power MOSFET DSG041N08NA TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
711. 180A 135V N-Channel Enhancement Mode Power MOSFET DSG052N14N TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...
712. 9A 200V N-Channel Enhancement Mode Power MOSFET 630 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
713. 120A 30V N-Channel Enhancement Mode Power MOSFET DH030N03D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
714. 85A 60V N-Channel Enhancement Mode Power MOSFET DH066N06 TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
715. 90A 200V N-Channel Enhancement Mode Power MOSFET DH100N20D TO-3PN [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
716. 160A 60V N-Channel Enhancement Mode Power MOSFET DH150N06 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
717. 60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
718. 10A 650V N-Channel Enhancement Mode Power MOSFET DHD10N65 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
719. 30A 60V N-Channel Enhancement Mode Power MOSFET DHD30N06 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...
720. 50A 40V N-Channel Enhancement Mode Power MOSFET DHD150N03 TO-252 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ Features Fast ...
