Jiangsu Profile

Product List
1051. 120A 80V N-Channel Enhancement Mode Power Mosfet DSG047n08n3 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
1052. 5A 650V N-Channel Enhancement Mode Power Mosfet F5n65
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT F5N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
1053. 3A 900V N-Channel Enhancement Mode Power Mosfet Dh3n90 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
1054. 20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1055. 40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40d to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH100P40D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -40 A (T=100ºC) -28 A Drain ...
1056. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1057. 10A 500V N-Channel Enhancement Mode Power Mosfet F10n50 to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) (Tc=25ºC) 10 (Tc=100ºC) 6.3 A Drain ...
1058. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10d to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS052N10/ DHS052N10I/ DHS052N10E/ DHS052N10B/ DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1059. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100f to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1060. 70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1061. 320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b
[Jun 24, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
1062. 220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1063. 8A 500V N-Channel Enhancement Mode Power Mosfet F8n50 to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT F8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1064. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1065. -30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
