Jiangsu Profile
Product List
1096. 50A 60V N-Channel Enhancement Mode Power MOSFET DHF50N06 TO-220F 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1097. 210A 60V N-Channel Enhancement Mode Power MOSFET DHE027N06 TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1098. 50A 60V N-Channel Enhancement Mode Power MOSFET DH50N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1099. 60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07B TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1100. 100A 30V N-Channel Enhancement Mode Power MOSFET DH033N03D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1101. 120A 100V N-Channel Enhancement Mode Power MOSFET DH10H055R TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1102. 21A 650V N-Channel Super Junction Power MOSFET DHFSJ21N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...
1103. 11A 650V N-Channel Super Junction Power MOSFET DHFSJ11N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1104. 40A 1200V Automotive Grade Power MOSFET G40N120D TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
1105. 160A 30V N-Channel Enhancement Mode Power MOSFET DH020N03P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 160 A (T=100ºC) 112 A Drain ...
1106. 145A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
1107. 85A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
1108. 96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH030N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
1109. 50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G50T65DS TO-247S [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
1110. Photo Etched Stamped Power Transistor Copper Lead Frame Packaging [Oct 08, 2026]
[Oct 08, 2026] OEM Sheet Metal Stamping IC Circuit Copper LED Lead Frame What is commonly referred to as etching, also known as photochemical etching, is a process that involves the following steps: through plate-making and exposure, ...
