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Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b
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1216.

Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b Open Details in New Window [Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b
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1217.

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b Open Details in New Window [Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT DH100P35/ DH100P35I/ DH100P 35E/ DH100P35B/ DH100P35D DH100P 35F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65
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1218.

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65 Open Details in New Window [Jul 27, 2024]

PARAMETER SYMBOL VALUE UNIT F20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 12.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 8A 650V N-Channel Enhancement Mode Power Mosfet F8n65 to-220f
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1219.

Hot Sale 8A 650V N-Channel Enhancement Mode Power Mosfet F8n65 to-220f Open Details in New Window [Jul 24, 2024]

PARAMETER SYMBOL VALUE UNIT F8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 650V N-Channel Enhancement Mode Power Mosfet 2n65 to-220
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1220.

2A 650V N-Channel Enhancement Mode Power Mosfet 2n65 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH85N06/DHI85N06/DHE85N06/DHB85N06/DHD85N06 DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263
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1221.

180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263
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1222.

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHF10H 037R DH10H037R/ DHE10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263
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1223.

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet Dse270n12n3
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1224.

120V/25mΩ /36A N-Mosfet Dse270n12n3 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04D to-252b
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1225.

130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04D to-252b Open Details in New Window [Aug 01, 2024]

PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 25A 110V N-Channel Enhancement Mode Power Mosfet Dhs250n11d to-252b
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1226.

Hot Sale 25A 110V N-Channel Enhancement Mode Power Mosfet Dhs250n11d to-252b Open Details in New Window [Aug 01, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 110 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b
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1227.

Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06D to-252b Open Details in New Window [Jul 26, 2024]

PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
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1228.

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c Open Details in New Window [Jul 22, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6
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1229.

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6
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1230.

50A 40V P-Channel Enhancement Mode Power Mosfet Dfn5X6 Open Details in New Window [Jun 24, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -40 V ID (T=25ºC) - -50 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 75 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd