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180A 80V N-Channel Enhancement Mode Power Mosfet Dhe8004 to-263
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1126.

180A 80V N-Channel Enhancement Mode Power Mosfet Dhe8004 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH8004 /DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263
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1127.

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn
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1128.

13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dhe3205A to-263
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1129.

100A 68V N-Channel Enhancement Mode Power Mosfet Dhe3205A to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263
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1130.

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263
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1131.

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07b to-251b
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1132.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07b to-251b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b
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1133.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263
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1134.

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH100P70E Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -75 A (T=100ºC) -52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Trenchstop Insulated Gate Bipolar Transistorsic Hybrid Discretedagc75h65m to-247
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1135.

75A 650V Trenchstop Insulated Gate Bipolar Transistorsic Hybrid Discretedagc75h65m to-247 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263
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1136.

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b
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1137.

33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH240N06L DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b
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1138.

4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

116A 68V N-Channel Enhancement Mode Power Mosfet Dhe070n06 to-263
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1139.

116A 68V N-Channel Enhancement Mode Power Mosfet Dhe070n06 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 116 A (T=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263
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1140.

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd