Jiangsu Profile
Product List
976. 50A 40V N-Channel Enhancement Mode Power Mosfet DHD150n03 to-252 
[Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ Features Fast ...
977. 80A 100V N-Channel Enhancement Mode Power Mosfet Dhs084n10d to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
978. 7A 650V N-Channel Super Junction Power Mosfet Dhdsj7n65 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
979. 2A 500V N-Channel Super Junction Power Mosfet Dsj2n50 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT SJ2N50/ISJ2N50/ ESJ2N50/BSJ2N50/DSJ2N50 FSJ2N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
980. Dhfsj15n65 to-220f 15A 650V N-Channel Super Junction Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
981. 180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
982. 150A 80V N-Channel Enhancement Mode Power Mosfet E150n08 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 150N08/I150N08/E150N08 F150N08 Maximum Drian-Source DC Voltage VDS 80 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
983. 60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
984. 18A 200V N-Channel Enhancement Mode Power Mosfet D18n20 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...
985. 10A 800V N-Channel Enhancement Mode Power Mosfet F10n80 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 10N80/I10N80/E10N80 F10N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
986. 18A 200V N-Channel Enhancement Mode Power Mosfet F640 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
987. D70n04 to-252 70A 40V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
988. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100b to-251 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
989. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85D to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS055N85/DHS055N85E DHS055N85D/DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
990. 63A 60V N-Channel Enhancement Mode Power Mosfet Dh132n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
