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Hot Sale 650V 4A N-Channel Enhancement Mode Power Mosfet D4n65 to-252
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961.

Hot Sale 650V 4A N-Channel Enhancement Mode Power Mosfet D4n65 to-252 Open Details in New Window [Jul 24, 2024]

PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 100V/15mΩ /50A N-Mosfet Dhs180n10ld to-252b
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962.

Hot Sale 100V/15mΩ /50A N-Mosfet Dhs180n10ld to-252b Open Details in New Window [Jul 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c
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963.

112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8
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964.

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8 Open Details in New Window [Aug 01, 2024]

PARAMETER SYMBOL VALUE UNIT DH025N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220
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965.

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220 Open Details in New Window [Jul 25, 2024]

PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 70V/6.3mΩ /100A N-Channel Enhancement Mode Power Mosfet Dh070n07 to-220c
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966.

Hot Sale 70V/6.3mΩ /100A N-Channel Enhancement Mode Power Mosfet Dh070n07 to-220c Open Details in New Window [Jul 22, 2024]

PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
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967.

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn
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968.

Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220
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969.

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03 to-220c
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970.

Hot Sale 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03 to-220c Open Details in New Window [Jul 26, 2024]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85 to-220c
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971.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet
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972.

Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Apr 08, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b
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973.

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b
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974.

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power Mosfet D1404 to-220
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975.

200A 40V N-Channel Enhancement Mode Power Mosfet D1404 to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT D1404/ID1404/ED1404 FD1404 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd