Jiangsu Profile
Product List
871. 220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07 TO-220C 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
872. 7.6A 650V N-Channel Super Junction Power MOSFET DHFSJ8N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.6 A (T=100ºC) 4.8 A Drain ...
873. 145A 60V N-Channel Enhancement Mode Power MOSFET DH045N06 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
874. 320A 30V N-Channel Enhancement Mode Power MOSFET DH012N03D TO-252B [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
875. 9A 900V N-Channel Enhancement Mode Power MOSFET 9N90B TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 9N90B Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 9 0A (T=100ºC) 5.7 A Drain ...
876. 220A 40V N-Channel Enhancement Mode Power MOSFET DTG025N04NA TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
877. 220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
878. 20A 60V P-Channel Enhancement Mode Power MOSFET DH500P06D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
879. 12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
880. 60A 60V N-Channel Enhancement Mode Power MOSFET DH132N06D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH132N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 35 A Drain ...
881. 5A 500V N-Channel Enhancement Mode Power MOSFET B5N50 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
882. 18A 500V N-Channel Enhancement Mode Power MOSFET 18N50 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
883. 174A 85V N-Channel Enhancement Mode Power MOSFET DHS030N88 TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
884. 12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10B TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
885. 9A 650V N-Channel Enhancement Mode Power MOSFET D9N65 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
