Jiangsu Profile
Product List
1066. 36A 120V N-Channel Enhancement Mode Power MOSFET DSG270N12N3 TO-220C 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...
1067. 140A 60V P-Channel Enhancement Mode Power MOSFET DTG050P06LA TO-220C [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -140 A BVGSS ±20 V VTH -1 -3 V EAS - - 1369 mJ Ptot - - 2.5 W Rdson 14 - 5.8 mΩ ...
1068. 80A 68V N-Channel Enhancement Mode Power MOSFET DTD080N07N TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
1069. 33A 60V N-Channel Enhancement Mode Power MOSFET DHF60N06 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...
1070. 80A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1071. 60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
1072. 238A 60V N-Channel Enhancement Mode Power MOSFET DH026N06 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...
1073. 18A 200V N-Channel Enhancement Mode Power MOSFET F640 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1074. 80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1075. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS130N10D TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1076. 105A 68V N-Channel Enhancement Mode Power MOSFET DHS055N07 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
1077. 210A 60V N-Channel Enhancement Mode Power MOSFET N6005 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT N6005/IN6005/EN6005 FN6005 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1078. 17A 650V N-Channel Super Junction Power MOSFET DHSJ17N65 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) ...
1079. 6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
1080. 210A 60V N-Channel Enhancement Mode Power MOSFET DHI027N06 TO-262 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH027N06//DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Drian Voltage VGSS ±25 V Drain ...
