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8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f
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1186.

8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V 150A N-Channel Enhancement Mode Power Mosfet DSG059n15na to-220c
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1187.

150V 150A N-Channel Enhancement Mode Power Mosfet DSG059n15na to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c
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1188.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c
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1189.

120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03 to-220c
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1190.

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 650V N-Channel Super Junction Power Mosfet Djc070n65m2 to-247
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1191.

70A 650V N-Channel Super Junction Power Mosfet Djc070n65m2 to-247 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b
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1192.

68V/7.2mΩ /80A N-Mosfet Dtd080n07n to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c
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1193.

120V/25mΩ /36A N-Mosfet DSG270n12n3 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c
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1194.

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f
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1195.

33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c
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1196.

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c
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1197.

-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c Open Details in New Window [Jun 24, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -140 A BVGSS ±20 V VTH -1 -3 V EAS - - 1369 mJ Ptot - - 2.5 W Rdson 14 - 5.8 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/12mΩ /70A N-Mosfet DSG140n12n3 to-220c
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1198.

120V/12mΩ /70A N-Mosfet DSG140n12n3 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263
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1199.

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
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1200.

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd