Jiangsu Profile
Famous Export Brand
Product List
391. 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f 
[Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
392. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
393. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
394. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [Dec 31, 2025]
[Dec 31, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
395. 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
396. 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
397. 640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
398. Insulated Gate Bipolar Transistor IGBT G15n120d to-247 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
399. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
400. Hot Sale 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20d to-252 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
401. 21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...
402. 15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
403. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
404. Hot Sale 88A 60V N-Channel Enhancement Mode Power Mosfet Dh070n06 to-220 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
405. Hot Sale 210A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03D to-252 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03/ Units DHI020N03/DHE020N03/DHB020N03/DHD020N03 DHF020N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
