Jiangsu Profile
Product List
1846. Round Disc Type Silicon Controlled Rectifier Thyristors Semi-Conductor Chips 
[Apr 22, 2025]
[Apr 22, 2025] Product Description High-Quality Semiconductor Chips: zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips offer exceptional performance and reliability, making them an ideal choice for ...
1847. Factory High Voltage Controller Cabinet 5kw-300kw Three-Phase AC Regulator 50Hz Frequency Usage for ... [Apr 21, 2025]
[Apr 21, 2025] Product Description High-Quality Construction: Introducing the POWERPASSION brand's exceptional three-phase automatic AC power controller-a direct-from-factory marvel of engineering that assures unmatched reliability ...
1848. Factory Direct Three-Phase Automatic SCR Silicon Controlled Rectifier 50Hz AC Voltage Stabilizer ... [Apr 21, 2025]
[Apr 21, 2025] Product Description High-Quality Construction: The POWERPASSION brand three-phase automatic AC power controller is a factory-direct product, ensuring reliability and durability. Its three-phase design provides stable ...
1849. High-Performance Phase Control Semiconductor Device Active Inverters Phased Rectification SCR ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1850. High Quality Kp1300 Phased Rectification Kp Series-Ordinary Distributed Gate Inverter Ceramic ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1851. Kp Ordinary Series Reliable Capsule Type Phase Distribute Gate Design Control Power Thyristor for ... [Apr 18, 2025]
[Apr 18, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
1852. Laser Micro-Etching Equipment [Jul 30, 2025]
[Jul 30, 2025] Product Description Product Features Ultra-fast laser processing system + F-T homogenization shaping technology, non-destructive ablation of various oxide films, passivation films and other materials Square spot size ...
1853. Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
1854. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
1855. 100V 50A N-Mosfet Dsd190n10L3 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1856. 10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...
1857. Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 [Jun 23, 2025]
[Jun 23, 2025] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...
1858. 20mΩ 650V N-Channel Sic Power Mosfet Dccf020m65g2 to-247-4L [Jun 23, 2025]
[Jun 23, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1859. 100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1860. Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
