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100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263
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1741.

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L
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1742.

30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L Open Details in New Window [Nov 08, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A, 800V, Fast Recovery Rectifierd Diode Fr306
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1743.

3A, 800V, Fast Recovery Rectifierd Diode Fr306 Open Details in New Window [Sep 22, 2025]

3A,50--1000V-Fast Recovery Rectifierd Diode-FR301--FR307 3A,800V,Fast Recovery Rectifierd Diode FR306 Datasheet PRODUCT SERIES Reliability Test List HIGH RELIABILITY-TEST LIST ...

Company: Changzhou Shunye Electronics Co., Ltd.

SMB, Schottky Barrier Rectifier Diode SMB Case Ss36
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1744.

SMB, Schottky Barrier Rectifier Diode SMB Case Ss36 Open Details in New Window [Aug 12, 2025]

3A,60V-SCHOTTKY DIODE-SS36/SK36(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

SMB, Schottky Rectifier Diode 3A 40V SMB Case Ss34
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1745.

SMB, Schottky Rectifier Diode 3A 40V SMB Case Ss34 Open Details in New Window [Aug 12, 2025]

3A,40V-SCHOTTKY DIODE-SS34/SK34(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

650V 60A Sic Schottky Barrier Diode Dcc60d65g3 to-247-3L
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1746.

650V 60A Sic Schottky Barrier Diode Dcc60d65g3 to-247-3L Open Details in New Window [Jun 23, 2025]

60A 650V SiC Schottky Barrier Diode Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 65A N-Channel Sic Power Mosfet to-3p Dhc1m025120d
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1747.

1200V 65A N-Channel Sic Power Mosfet to-3p Dhc1m025120d Open Details in New Window [Jun 23, 2025]

65A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b
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1748.

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p
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1749.

7A 1700V N-Channel Sic Power Mosfet Dhc1m650170d to-3p Open Details in New Window [Jun 23, 2025]

7.0A 1700V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b
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1750.

11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

34mm 50A 1200V Half Bridge IGBT Module
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1751.

34mm 50A 1200V Half Bridge IGBT Module Open Details in New Window [Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 1200V Half Bridge IGBT Module
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1752.

100A 1200V Half Bridge IGBT Module Open Details in New Window [Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
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1753.

60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn Open Details in New Window [Jun 23, 2025]

60A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

SMC, 5A, 60V, Schottky Diode Sk56
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1754.

SMC, 5A, 60V, Schottky Diode Sk56 Open Details in New Window [Jun 17, 2025]

SMC,5A,60V,Schottky Diode SK56 Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

SMC, 5A, 100V, Schottky Diode Sk510
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1755.

SMC, 5A, 100V, Schottky Diode Sk510 Open Details in New Window [Jun 17, 2025]

SMC,5A,100V,Schottky Diode SK510 Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.