Jiangsu Profile
Product List
1741. -30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b 
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1742. 240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c [Jun 25, 2025]
[Jun 25, 2025] Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
1743. 35A 120V N-Channel Enhancement Mode Power Mosfet Dsd270n12n3 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 35 A (Tc=100ºC) 22 A Drain ...
1744. 20A 45V Low Vf Schottkybarrierdiode Mbr20r45CT to-220c [Jun 25, 2025]
[Jun 25, 2025] SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
1745. 1700V IGBT Module Dgc75c170m2t [Jun 25, 2025]
[Jun 25, 2025] 75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
1746. 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
1747. 7.6A 650V N-Channel Super Junction Power Mosfet Dhfsj8n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.6 A (T=100ºC) 4.8 A Drain ...
1748. Industrial Solid State SSR Control Power Relays Multi-Phase DC AC High Power 30A Contact Load 5V ... [Jun 25, 2025]
[Jun 25, 2025] Product Description Solid State Relay High-Power Reliability: Discover the pinnacle of cutting-edge engineering with our miniature-sized SSR solid state relay, meticulously designed to offer unmatched reliability. ...
1749. Replacement SCR Thyristor Module 130A 1200V [Jun 24, 2025]
[Jun 24, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1750. Chinese Supplier Zhendi Manufacturer Dioda Stud Zp300A Thyristor 500A 1600V Kp500A Silicon Welder ... [Jun 24, 2025]
[Jun 24, 2025] Product Description Normal working conditions and installation conditions 1. The product operates efficiently in self-cooling and air-cooled environments with ambient temperatures ranging from -40 °C to 40 ...
1751. 21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1752. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
1753. 30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...
1754. 5A 500V N-Channel Enhancement Mode Power Mosfet B5n50 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1755. 75A 650V 34mm Half Bridge IGBT Module [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...
