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0.5A, 40V, Schottky Barrier Diode B0540W
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1051.

0.5A, 40V, Schottky Barrier Diode B0540W Open Details in New Window [Nov 20, 2025]

0.5A,40V-SCHOTTKY DIODE-B0540W Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

1A, 1000V-High Efficiency Rectifier Diode-Her108
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1052.

1A, 1000V-High Efficiency Rectifier Diode-Her108 Open Details in New Window [Nov 20, 2025]

1A,50-1000V,HIGH EFFICIENCY RECTIFIER DIODEHER101--HER108 1A,1000V-HIGH EFFICIENCY RECTIFIER DIODE-HER108 Datasheet Products list HIGH EFFICIENCY RECTIFIERS TYPE Maximum Peak Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

50A, 1600V, Rectifier Module MD50A16
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1053.

50A, 1600V, Rectifier Module MD50A16 Open Details in New Window [Nov 20, 2025]

50A, 800-1600V-rectifier module---MD50A08-MD50A16 50A,1600V,MD50A16 Datasheet Product Pictures PRODUCT SERIES Type VRRM IRRM lo Tc lF(AV) IF(RMS) IFsM VFM VTo Rm(re) Rm(ch) ...

Company: Changzhou Shunye Electronics Co., Ltd.

3A, 300V, High Efficinec Rectifier Diode Her304
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1054.

3A, 300V, High Efficinec Rectifier Diode Her304 Open Details in New Window [Nov 20, 2025]

3A,50--1000V-HIGH EFFICIENCY RECTIFIER DIODE-HER301--HER308 3A,300V-HIGH EFFICIENCY RECTIFIER DIODE-HER304 Datasheet Products list HIGH EFFICIENCY RECTIFIERS TYPE Maximum Peak Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

200A, 1600V, Rectifier Module Mds200A16b
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1055.

200A, 1600V, Rectifier Module Mds200A16b Open Details in New Window [Nov 20, 2025]

We supply 200A,800-1600V RECTIFIER MODULE MDS200A08-MDS200A16 200A,1600V,MDS200A16B Datasheet Product Pictures PRODUCT ...

Company: Changzhou Shunye Electronics Co., Ltd.

30A, 100V, Schottky Rectifier Diode Mbr30100fct
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1056.

30A, 100V, Schottky Rectifier Diode Mbr30100fct Open Details in New Window [Nov 20, 2025]

30A,20-100V,SCHOTTKY DIODE 30A,100V Schottky Rectifier Diode MBR30100FCT Datasheet Products list SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

3A, 1000V-High Efficiency Rectifier Diode-Her308
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1057.

3A, 1000V-High Efficiency Rectifier Diode-Her308 Open Details in New Window [Nov 20, 2025]

3A,50--1000V-HIGH EFFICIENCY RECTIFIER DIODE-HER301--HER308 3A,1000V-HIGH EFFICIENCY RECTIFIER DIODE-HER308 Datasheet Products list HIGH EFFICIENCY RECTIFIERS TYPE Maximum Peak Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

SMA, 5A, 150V, Schottky Diode Ss515
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1058.

SMA, 5A, 150V, Schottky Diode Ss515 Open Details in New Window [Nov 20, 2025]

SMA,5A,150V,Schottky Diode SS515 Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

Three-termainal regulator IC DH7107GP DIP40
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1059.

Three-termainal regulator IC DH7107GP DIP40 Open Details in New Window [Sep 30, 2026]

The DH7107 are high performance, low power, 31/2 digit A/D converters. Included are seven segment decoders, display drivers, a reference, and a clock. The DH7107 will directly drive an instrument size light emitting ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263
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1060.

170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN
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1061.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263
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1062.

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

660A 800V N-Channel Enhancement Mode Power MOSFET DJE660N80E TO-263
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1063.

660A 800V N-Channel Enhancement Mode Power MOSFET DJE660N80E TO-263 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 100V N-Channel Enhancement Mode Power MOSFET DSE022N10N3 TO-263
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1064.

240A 100V N-Channel Enhancement Mode Power MOSFET DSE022N10N3 TO-263 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263
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1065.

180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd