Jiangsu Profile

Product List
1156. 120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...
1157. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1158. 220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07D to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1159. 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
[Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
1160. 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) -13 (Tc=100ºC) -9 A Drain ...
1161. 20A 400V Fast Recovery Diode Mur20fu40CT to-220c
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1162. 30A 600V Fast Recovery Diode Murf3060 to-220-2L
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1163. 650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L
[Jun 24, 2024]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1164. 174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1165. 120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1166. 20A 60V Low Vf Schottky Barrier Diode Hmbrd20r60 to-252
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
1167. 6A 900V N-Channel Enhancement Mode Power Mosfet F6n90 to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 6 A (T=100ºC) 3.7 A Drain ...
1168. -50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...
1169. 40A 650V Sic Schottky Barrier Diode Dcc40d65g4 to-247
[Jun 24, 2024]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1170. 10A 400V Fast Recovery Diode Murf1040 to-220f-2L
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
