Jiangsu Profile

Product List
1216. 40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
1217. 8A 600V Fast Recovery Diode Mur860CT to-220c
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1218. 68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1219. 19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH300N08 /DH300N08E DH300N08B/DH300N08D DH300 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1220. 20A 1200V Sic Schottky Barrier Diode Dcc20d120g4 to-247
[Jun 24, 2024]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1221. 50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
1222. 650V 30A N-Channel Sic Power Mosfet Dccf060m65g2 to-247-4L
[Jun 24, 2024]

30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
1223. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p28 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1224. 49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08d to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1225. 50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12D to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 50 (Tc=100ºC) 35 A Drain ...
1226. 15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
[Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...
1227. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1228. 6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
[Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
1229. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...
1230. 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
