Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Semiconductor

» Jiangsu Product List

Product List

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c
Contact Now

1216.

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 600V Fast Recovery Diode Mur860CT to-220c
Contact Now

1217.

8A 600V Fast Recovery Diode Mur860CT to-220c Open Details in New Window [Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c
Contact Now

1218.

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c
Contact Now

1219.

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH300N08 /DH300N08E DH300N08B/DH300N08D DH300 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 1200V Sic Schottky Barrier Diode Dcc20d120g4 to-247
Contact Now

1220.

20A 1200V Sic Schottky Barrier Diode Dcc20d120g4 to-247 Open Details in New Window [Jun 24, 2024]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c
Contact Now

1221.

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 30A N-Channel Sic Power Mosfet Dccf060m65g2 to-247-4L
Contact Now

1222.

650V 30A N-Channel Sic Power Mosfet Dccf060m65g2 to-247-4L Open Details in New Window [Jun 24, 2024]

30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p28 to-220c
Contact Now

1223.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p28 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08d to-252b
Contact Now

1224.

49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08d to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12D to-252b
Contact Now

1225.

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12D to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 50 (Tc=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
Contact Now

1226.

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c
Contact Now

1227.

120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
Contact Now

1228.

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c
Contact Now

1229.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
Contact Now

1230.

0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd