Jiangsu Profile
Product List
1276. 62mm Module HCG 1200V 1700V 150A-800A IGBT Power Module 
[Nov 26, 2025]
[Nov 26, 2025] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
1277. Hot Sale 60A 300V Fast Recovery Diode Mur6030nca to-3p [Jan 31, 2026]
[Jan 31, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1278. Wholesale Intelligent Voltage Regulation Module Voltage Adjustable 220V-380V Single Phase Voltage ... [Jan 04, 2026]
[Jan 04, 2026] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1279. Advanced High Accuracy High-Efficiency Digital Display Three Phase SCR Silicon Controller Regulator ... [Jan 04, 2026]
[Jan 04, 2026] Product Description High Voltage Capacity: Experience the unmatched capability of our 380V Three Phase Voltage Thyristor SCR Power Regulator Stabilizers. Expertly designed to tackle high voltage requirements, this ...
1280. High Power Electronic Fast Response 500kVA SCR Control Industrial Power Conditioner Voltage ... [Jan 04, 2026]
[Jan 04, 2026] Product Description Universal Compatibility: Experience seamless integration with the SCR Power Regulator by Zhenjiang Zhendi Electric Technology Co., Ltd. This cutting-edge 3-phase SCR power voltage regulator is ...
1281. IGBT and SCR Thyristor Module Semiconductor 1600V Bridge Rectifier Water Cooling Diode SCR ... [Jan 04, 2026]
[Jan 04, 2026] Product Description Thyristor Module High Power Handling Capacity: Meticulously engineered to exceed the requirements of high-power applications, this cutting-edge semiconductor module is a marvel of technology, ...
1282. 21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...
1283. Factory Direct Sale SCR Silicon Controlled Rectifier Thyristors SCR Semi-Conductor Chips [Dec 02, 2025]
[Dec 02, 2025] Product Description High-Quality Semiconductor Chips: Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips are meticulously crafted for exceptional performance and unwavering ...
1284. Factory Price CNC Semiconductor Equipment Parts High Quality Thyristors Silicon Chips [Dec 02, 2025]
[Dec 02, 2025] Product Description High-Quality Semiconductor Chips: At Zhenjiang Zhendi Electric Technology Co., Ltd, our Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips stand out for their remarkable ...
1285. SSR Control Solid State Relay Module for Compact High Power Solutions [Dec 02, 2025]
[Dec 02, 2025] Product Description Solid State Relay High-Power Reliability: Discover the pinnacle of cutting-edge engineering with this compact SSR solid state relay. Designed to provide extraordinary reliability, it boasts a ...
1286. 15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
1287. 16A 200V Fast Recovery Diode Mur1620CT to-220 **%off [Nov 28, 2025]
[Nov 28, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1288. 20A 150V Schottky Barrier Diode Mbr20150CT to-220 [Nov 28, 2025]
[Nov 28, 2025] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...
1289. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1290. Hot Sale 210A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03D to-252 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03/ Units DHI020N03/DHE020N03/DHB020N03/DHD020N03 DHF020N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
