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21A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10LD TO-252B
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1411.

21A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10LD TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

82A 40V N-Channel Enhancement Mode Power MOSFET DSD065N04LA TO-252B
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1412.

82A 40V N-Channel Enhancement Mode Power MOSFET DSD065N04LA TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power MOSFET DSG052N14N TO-220C
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1413.

180A 135V N-Channel Enhancement Mode Power MOSFET DSG052N14N TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07D TO-252B
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1414.

220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

19A 80V N-Channel Enhancement Mode Power MOSFET DH300N08D TO-252B
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1415.

19A 80V N-Channel Enhancement Mode Power MOSFET DH300N08D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 19 A (T=100ºC) 13 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V N-Channel SiC Power MOSFET 40M TO-247
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1416.

650V N-Channel SiC Power MOSFET 40M TO-247 Open Details in New Window [Aug 09, 2026]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247
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1417.

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 650V SiC Schottky Barrier Diode DCD04D65G4 TO-252
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1418.

4A 650V SiC Schottky Barrier Diode DCD04D65G4 TO-252 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 100V N-Channel Enhancement Mode Power MOSFET DSG054N10N3 TO-220C
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1419.

140A 100V N-Channel Enhancement Mode Power MOSFET DSG054N10N3 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 600V N-Channel Enhancement Mode Power MOSFET D2N60 TO-252B
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1420.

2A 600V N-Channel Enhancement Mode Power MOSFET D2N60 TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT D2N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 0A (T=100ºC) 1.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 700V N-Channel Enhancement Mode Super Junction Power MOSFET DJF360N70T TO-220F
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1421.

12A 700V N-Channel Enhancement Mode Super Junction Power MOSFET DJF360N70T TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 700V N-Channel Enhancement Mode Power MOSFET F7N70 TO-220F
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1422.

7A 700V N-Channel Enhancement Mode Power MOSFET F7N70 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT F7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04D TO-252B
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1423.

180A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 650V N-Channel Enhancement Mode Power MOSFET F12N65 TO-220F
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1424.

12A 650V N-Channel Enhancement Mode Power MOSFET F12N65 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power MOSFET F8N50 TO-220F
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1425.

8A 500V N-Channel Enhancement Mode Power MOSFET F8N50 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT F8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd