Jiangsu Profile
Product List
1441. 145A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06p Dfn5*6-8L 
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...
1442. 10A 100V Schottkybarrierdiode Mbr10100CT to-220m [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
1443. 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20b to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1444. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
1445. China Supplier Zhendi Manufacturer SCR Semiconductor Soi Wafer [Jun 24, 2025]
[Jun 24, 2025] Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...
1446. Chinese IC Supplier Monocrystalline Silicon Semiconductor Wafer Price [Jun 24, 2025]
[Jun 24, 2025] Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...
1447. China Supplier Zhendi Manufacturer SCR Thyristors 25f160 Thyristors [Jun 24, 2025]
[Jun 24, 2025] Product Description Normal working conditions and installation conditions 1. The product operates efficiently in self-cooling and air-cooled environments with ambient temperatures ranging from -40 °C to 40 ...
1448. Wholesale Price 1600V 90A Power Diode Modules Thyristor Rectifier [Jun 24, 2025]
[Jun 24, 2025] Product Description High Voltage Capability: The High Volta MD90 Switching Diode is designed to handle high voltage applications, with a maximum peak reverse voltage of 6500V, making it suitable for demanding inverter ...
1449. China Supplier Zhendi Manufatcurer Semiconductor Silicon Wafer Chip for Thyristor Appliacation [Jun 24, 2025]
[Jun 24, 2025] Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...
1450. Single Crystal Silicon Thyristor Wafer Sound Price [Jun 24, 2025]
[Jun 24, 2025] Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...
1451. China Supplier Zhendi Manufacturer Thyristor Semiconductor P/N-Type Wafer [Jun 24, 2025]
[Jun 24, 2025] Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...
1452. 85A 80V N-Channel Enhancement Mode Power Mosfet Dh075n08d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
1453. 10A 60V Schottky Barrier Diode Mbr1060CT to-220 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
1454. 50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 50 A Pulsed Collector Current ICM 150 A Diode ...
1455. 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220 [Jun 23, 2025]
[Jun 23, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
