Jiangsu Profile
Product List
1441. 220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c 
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
1442. 6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
1443. -50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...
1444. -30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1445. 240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c [Jun 25, 2025]
[Jun 25, 2025] Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
1446. 35A 120V N-Channel Enhancement Mode Power Mosfet Dsd270n12n3 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 35 A (Tc=100ºC) 22 A Drain ...
1447. 20A 45V Low Vf Schottkybarrierdiode Mbr20r45CT to-220c [Jun 25, 2025]
[Jun 25, 2025] SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
1448. 50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1449. Insulated Gate Bipolar Transistor IGBT G15n60d to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
1450. 1700V IGBT Module Dgc75c170m2t [Jun 25, 2025]
[Jun 25, 2025] 75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
1451. 0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
1452. 7.6A 650V N-Channel Super Junction Power Mosfet Dhfsj8n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.6 A (T=100ºC) 4.8 A Drain ...
1453. China Supplier Zhendi Manufacturer SCR Thyristor Semiconductor Wafer Price Silicon Wafer 100 Price [Jun 25, 2025]
[Jun 25, 2025] Product Description High-Quality Semiconductor Chips: Discover the unparalleled excellence of zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semi-conductor Chips. Engineered for superior performance ...
1454. Adjustable High Voltage Diode Switching Rectifier Multi-Functional Brid Thyristor with Hole Case ... [Jun 24, 2025]
[Jun 24, 2025] Product Description High Voltage Capability: Introducing the High Volta MD90 Switching Diode, expertly engineered to excel under high voltage conditions. With an impressive maximum peak reverse voltage of 6500V, this ...
1455. 21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
