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70A 200V Fast Recovery Diode Mur7020nca to-3pn
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1651.

70A 200V Fast Recovery Diode Mur7020nca to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07b to-251b
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1652.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07b to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 200V Fast Recovery Diode Mur3020DCT to-3pn
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1653.

30A 200V Fast Recovery Diode Mur3020DCT to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn
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1654.

240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 240 A BVGSS ±20 V EAS - - 1190 mJ Ptot - - 2 W Rdson - - 2.2 mΩ Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12e to-263
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1655.

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Trenchstop Insulated Gate Bipolar Transistorsic Hybrid Discretedagc75h65m to-247
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1656.

75A 650V Trenchstop Insulated Gate Bipolar Transistorsic Hybrid Discretedagc75h65m to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263
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1657.

155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b
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1658.

33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH240N06L DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263
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1659.

75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P70E Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -75 A (T=100ºC) -52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263
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1660.

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263
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1661.

120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur6030ncs
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1662.

60A 300V Fast Recovery Diode Mur6030ncs Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode Mur80g40nct to-3pn
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1663.

80A 400V Fast Recovery Diode Mur80g40nct to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode Murf1040CT to-220f
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1664.

10A 400V Fast Recovery Diode Murf1040CT to-220f Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263
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1665.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd