Jiangsu Profile
Product List
1636. Premium Thyristor Module with Diode and Rectifier Semiconductor Technology 
[Jun 26, 2025]
[Jun 26, 2025] Product Description Thyristor Module High Power Handling Capacity: Discover the awe-inspiring capabilities of our innovative N and P-Channel SCR Thyristor Control Power Module. Expertly engineered for the most ...
1637. Wholesale Price Mdk 55A 1600V Thyristor Module for Rectifiers [Jun 26, 2025]
[Jun 26, 2025] Product Description Thyristor Module High Power Handling Capacity: Discover our revolutionary N and P-Channel SCR Thyristor Control Power Module, purpose-built for the most rigorous high-power demands. With a ...
1638. High Quality 100 AMP MB10f Phase Diode Bridge Rectifier [Jun 05, 2025]
[Jun 05, 2025] Product Description High Power Handling Capacity: This high-quality 100 amp MB10F phase diode bridge rectifier is designed to handle high power applications with ease, featuring a maximum forward current of 200A and a ...
1639. 120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06B TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...
1640. 200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1641. 4.8A 650V N-Channel Super Junction Power MOSFET DHBSJ5N65 TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
1642. 83A 600V N-Channel Super Junction Power MOSFET DJC032N60F TO-247 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...
1643. 180A 100V N-Channel Enhancement Mode Power MOSFET DSG031N10N3 TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...
1644. 50A 150V N-Channel Enhancement Mode Power MOSFET DH50N15 TO-220 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1645. 20A 150V Schottky Barrier Diode MBR20150CT TO-220 [Aug 13, 2026]
[Aug 13, 2026] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...
1646. 10A 600V Fast Recovery Diode MUR1060 TO-220 [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1647. 45A 300V Fast Recovery Diode MUR4530DCS TO-3P [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1648. 8A 1200V Fast Recovery Diode MUR8120 TO-220 [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1649. 5A 600V N-Channel Enhancement Mode Power MOSFET F5N60 TO-220F [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT F5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
1650. 115A 150V N-Channel Enhancement Mode Power MOSFET DSG092N15N3A TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
