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Dh3205t to-220c 120A 55V Mosfets N-Channel Enhancement Mode Power Mosfet
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1201.

Dh3205t to-220c 120A 55V Mosfets N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 2100 mJ Ptot - - 320 W Rdson 6.8 - 8.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 1200V Fast Recovery Diode Mur60120 to-247-2L
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1202.

60A 1200V Fast Recovery Diode Mur60120 to-247-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 200V Schottky Barrier Diode Hmbr30200CT to-220
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1203.

30A 200V Schottky Barrier Diode Hmbr30200CT to-220 Open Details in New Window [Jun 23, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical applications are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c
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1204.

112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c Open Details in New Window [Sep 29, 2025]

PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220
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1205.

70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet 180n06 to-247
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1206.

180A 60V N-Channel Enhancement Mode Power Mosfet 180n06 to-247 Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 130 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh240n06ld to-252 30A 60V N-Channel Enhancement Mode Power Mosfet
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1207.

Dh240n06ld to-252 30A 60V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 30, 2025]

PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet 10n65 to-220
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1208.

10A 650V N-Channel Enhancement Mode Power Mosfet 10n65 to-220 Open Details in New Window [Jun 25, 2025]

Features Low switching loss Low ON Resistance (Rdson≤5.5mΩ) Low Gate Charge (Typ: 48nC) Low Reverse Transfer Capacitances (Typ: 210pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet Dh60n06 to-220
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1209.

50A 60V N-Channel Enhancement Mode Power Mosfet Dh60n06 to-220 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH60N06/DHI60N06/DHE60N06/ DHB60N06/DHD60N06 DHF60N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

500V 5A N-Channel Enhancement Mode Power Mosfet F5n50 to-220f
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1210.

500V 5A N-Channel Enhancement Mode Power Mosfet F5n50 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Low Vf Schottky Barrier Diode Mbr30r45cts to-220c
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1211.

30A 45V Low Vf Schottky Barrier Diode Mbr30r45cts to-220c Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 700V N-Channel Enhancement Mode Power Mosfet Dhdsj8n70 to-252b
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1212.

8A 700V N-Channel Enhancement Mode Power Mosfet Dhdsj8n70 to-252b Open Details in New Window [Jun 25, 2025]

Features Fast switching Low on resistance(Rdson≤0.6Ω) Low gate charge(Typ: 16nC) Low reverse transfer capacitances(Typ: 3.1pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15 to-220c & Dhs110n15D to-252b
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1213.

105A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15 to-220c & Dhs110n15D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220
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1214.

160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 650V N-Channel Super Junction Power Mosfet Dhfsj7n65 to-220f
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1215.

7A 650V N-Channel Super Junction Power Mosfet Dhfsj7n65 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd