Jiangsu Profile
Product List
1246. 180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...
1247. 80A 200V Fast Recovery Diode Mur80fu20nca to-247 [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1248. 20A 600V N-Channel Enhancement Mode Power Mosfet 20n60 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1249. 20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L [Jun 24, 2024]
[Jun 24, 2024] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1250. 17A 650V N-Channel Super Junction Power Mosfet Dhfsj17n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
1251. 9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1252. 3A 900V N-Channel Enhancement Mode Power Mosfet DHD3n90 to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
1253. 650V 30mΩ N-Channel Sic Power Mosfet to-247-3L [Jun 24, 2024]
[Jun 24, 2024] 30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1254. 18A 1200V N-Channel Sic Power Mosfet Dcc160m120g1 to-247-3L [Jun 24, 2024]
[Jun 24, 2024] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1255. 40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
1256. 8A 600V Fast Recovery Diode Mur860CT to-220c [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1257. 68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1258. 19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH300N08 /DH300N08E DH300N08B/DH300N08D DH300 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1259. 20A 1200V Sic Schottky Barrier Diode Dcc20d120g4 to-247 [Jun 24, 2024]
[Jun 24, 2024] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1260. 50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
