Jiangsu Profile
Product List
1171. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10f to-220f 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 110 A Drain ...
1172. 10A 650V N-Channel Enhancement Mode Power Mosfet F10n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 0A (T=100ºC) 6.3 A Drain ...
1173. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
1174. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1175. 20A 60V P-Channel Enhancement Mode Power Mosfet DHD9z24 to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
1176. 31A 600V N-Channel Super Junction Power Mosfet Djc099n60f to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...
1177. 16A 600V Fast Recovery Diode Murf1660CT to-220f [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1178. 200V/11mΩ /110A N-Mosfet DSG108n20na to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1179. 140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1180. 220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
1181. 100A 85V N-Channel Enhancement Mode Power Mosfet Dh85n08 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH85N08/ DHE85N08 DHF85N08F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1182. 49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1183. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
1184. 20A 650V Sic Schottky Barrier Diode Dcc20d65g4 to-247 [Jun 24, 2024]
[Jun 24, 2024] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1185. 140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03D to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
